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US 12,283,611 B2Granted
Semiconductor structure
AssigneeGlobalWafers Co., Ltd.
InventorsPo Jung Lin, Tzu-Yao Lin
Life of this patent
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Abstract
A semiconductor structure includes a substrate, a first nitride layer, a second nitride layer, a third nitride layer, and a polarity inversion layer. The first nitride layer is formed on the substrate, and the polarity inversion layer formed at a surface of the first nitride layer converts a non-metallic polar surface of the first nitride layer into a metallic polar surface of the polarity inversion layer. The second nitride layer is formed on the polarity inversion layer. The third nitride layer is formed on the second nitride layer.
Claims18
A semiconductor structure, comprising:
- a substrate;
- a first nitride layer formed on the substrate;
- a polarity inversion layer formed at a surface of the first nitride layer to convert a non-metallic polar surface of the first nitride layer into a metallic polar surface of the polarity inversion layer;
- a second nitride layer formed on the polarity inversion layer;
- and
- a third nitride layer formed on the second nitride layer.
3 more elements
Dependencies are inferred from the claim text.