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US 12,094,936 B2Granted
Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
AssigneeASM IP Holding B.V.
InventorsFu Tang, Peng-Fu Hsu, Michael Eugene Givens, Qi Xie
Life of this patent
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Abstract
Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.
Claims20
A semiconductor processing apparatus, comprising:
- a reaction chamber configured to hold a substrate, the reaction chamber including at least one chamber wall;
- a precursor delivery system in fluid communication with the reaction chamber;
- and
- a controller operably connected to at least one of the reaction chamber or the precursor delivery system and comprising a storage medium having instructions stored thereon configured to perform operations including:
- regulating a temperature of a first precursor below a temperature of 70° C.;
- and
- depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process, wherein a unit deposition cycle comprises:
- contacting the substrate with a metal vapor phase precursor from the precursor delivery system;
- contacting the substrate with a silicon vapor phase precursor from the precursor delivery system;
- and
- contacting the substrate with a hydrogen peroxide precursor from the precursor delivery system,
- wherein the first precursor is at least one of the metal vapor phase precursor, the silicon vapor phase precursor, or the hydrogen peroxide precursor.
9 more elements
A semiconductor processing apparatus, comprising:
- a reaction chamber configured to hold a substrate, the reaction chamber including at least one chamber wall;
- a precursor delivery system in fluid communication with the reaction chamber;
- and
- a controller operably connected to at least one of the reaction chamber or the precursor delivery system and comprising a storage medium having instructions stored thereon configured to perform operations including:
- regulating a temperature of a hydrogen peroxide precursor below a temperature of 70° C.;
- and
- depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process, wherein a unit deposition cycle comprises:
- contacting the substrate with a metal vapor phase precursor from the precursor delivery system;
- contacting the substrate with a silicon vapor phase precursor from the precursor delivery system;
- and
- contacting the substrate with the hydrogen peroxide precursor from the precursor delivery system.
8 more elements
A semiconductor processing apparatus, comprising:
- a reaction chamber configured to hold a substrate, the reaction chamber including at least one chamber wall;
- a precursor delivery system in fluid communication with the reaction chamber;
- a gas dispenser coupled to the reaction chamber in fluid communication with the precursor delivery system;
- and
- a controller operably connected to at least one of the reaction chamber, the precursor delivery system, or the gas dispenser and comprising a storage medium having instructions stored thereon configured to perform operations including:
- regulating a temperature of at least one of the precursor delivery system, at least a portion of the at least one chamber wall, or the gas dispenser below a temperature of 70° C.;
- depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process, wherein a unit deposition cycle comprises:
- contacting the substrate with a metal vapor phase precursor from the precursor delivery system;
- contacting the substrate with a silicon vapor phase precursor from the precursor delivery system;
- and
- contacting the substrate with a hydrogen peroxide precursor from the precursor delivery system.
8 more elements
Dependencies are inferred from the claim text.