H10P 14/6933
The material containing at least one rare earth element
Official title: {the material containing at least one rare earth element, e.g. silicate of scandium or silicate of yttrium}
H10P14/6933 (The material containing at least one rare earth element) appears on 67 US grants and 80 published applications in this corpus.
Search patents in H10P- Granted patents
- 67
- Published applications
- 80
- Assignees
- 40
- Inventors
- 151
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2001 | 1 | 1 |
| 2002 | 0 | 2 |
| 2003 | 4 | 3 |
| 2004 | 1 | 2 |
| 2005 | 3 | 9 |
| 2006 | 2 | 7 |
| 2007 | 3 | 4 |
| 2008 | 4 | 6 |
| 2009 | 6 | 9 |
| 2010 | 8 | 3 |
| 2011 | 6 | 3 |
| 2012 | 4 | 4 |
| 2013 | 3 | 1 |
| 2014 | 0 | 2 |
| 2015 | 4 | 3 |
| 2016 | 4 | 5 |
| 2017 | 1 | 2 |
| 2018 | 1 | 1 |
| 2019 | 0 | 3 |
| 2020 | 3 | 2 |
| 2021 | 1 | 1 |
| 2022 | 3 | 2 |
| 2023 | 0 | 0 |
| 2024 | 3 | 2 |
| 2025 | 0 | 0 |
| 2026 | 2 | 3 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and methods of manufacturing the semiconductor device1 Sep 2026US 12,727,231 B2SK hynix Inc.
- Semiconductor device having cut gate dielectric17 Feb 2026US 12,557,372 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Electrode formation23 Jul 2024US 12,046,658 B2Micron Technology, Inc.
- Semiconductor structure and its formation method7 May 2024US 11,978,624 B2Changxin Memory Technologies, Inc.
- Semiconductor device having cut gate dielectric13 Feb 2024US 11,901,237 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and methods of manufacturing the semiconductor device8 Oct 2026US 2026/0314019 A1SK hynix Inc.
- Semiconductor device having cut gate dielectric28 May 2026US 2026/0150387 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for manufacturing semiconductor device with reduced interfacial layer thickness5 Mar 2026US 2026/0068557 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device having cut gate dielectric27 Jun 2024US 2024/0213097 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and methods of manufacturing the semiconductor device2 May 2024US 2024/0145563 A1SK hynix Inc.
Most cited
By later US patents
- Method of growing oxide thin films546US 7,824,492 B2ASM International N.V. · 2010
- Annealing of high-k dielectric materials538US 6,544,906 B2Texas Instruments Incorporated · 2003
- Integrated process for fabrication of graded composite dielectric material layers for semiconductor devices166US 6,586,349 B1Advanced Micro Devices, Inc. · 2003
- Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors90US 6,531,354 B2North Carolina State University · 2003
- Dielectric structures having high dielectric constants, and non-volatile semiconductor memory devices having the dielectric structures87US 7,482,677 B2Samsung Electronics Co., Ltd. · 2009