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US 12,046,658 B2Granted
Electrode formation
AssigneeMicron Technology, Inc.
InventorsAn-Jen B. Cheng, Brenda D. Kraus, Sanket S. Kelkar, Matthew N. Rocklein, Christopher W. Petz, Richard Beeler, Dojun Kim
Life of this patent
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Abstract
Apparatuses, methods, and systems related to electrode formation are described. A first portion of a top electrode is formed over a dielectric material of a storage node. A metal oxide is formed over the first portion of the electrode. A second portion of the electrode is formed over the metal oxide.
Claims18
An apparatus, comprising:
- a bottom electrode of a storage node;
- a dielectric material of the storage node formed over the bottom electrode;
- a first portion of a top electrode of the storage node formed over the dielectric material, wherein the first portion of the top electrode has a first thickness;
- a first metal oxide formed over the first portion of the top electrode, wherein the first metal oxide is a discontinuous layer separating the first portion of the top electrode from a second portion of the top electrode such that the first portion of the top electrode contacts the second portion of the top electrode through gaps in the first metal oxide;
- the second portion of the top electrode formed over the first metal oxide, wherein the second portion of the top electrode has a second thickness;
- a second metal oxide formed over the second portion of the top electrode, wherein the second metal oxide is a discontinuous layer separating the second portion of the top electrode from a third portion of the top electrode such that the second portion of the top electrode contacts the third portion of the top electrode through gaps in the second metal oxide;
- and
- the third portion of the top electrode formed over the second metal oxide, wherein the third portion of the top electrode has a third thickness.
5 more elements
A method comprising:
- depositing a bottom electrode of a storage node to a memory cell;
- depositing a dielectric material of the storage node to the memory cell over the bottom electrode;
- depositing a first portion of a top electrode of the storage node to the memory cell over the dielectric material, wherein the first portion of the top electrode has a first thickness;
- depositing a first metal oxide over the first portion of the top electrode, wherein the first metal oxide is a discontinuous layer separating the first portion of the top electrode from a second portion of the top electrode such that the first portion of the top electrode contacts the second portion of the top electrode through gaps in the first metal oxide;
- depositing the second portion of the top electrode over the first metal oxide, wherein the second portion of the top electrode has a second thickness;
- depositing a second metal oxide over the second portion of the top electrode, wherein the second metal oxide is a discontinuous layer separating the second portion of the top electrode and a third portion of the top electrode such that the second portion of the top electrode contacts the third portion of the top electrode through gaps in the second metal oxide;
- and
- depositing the third portion of the top electrode over the second metal oxide, wherein the third portion of the top electrode has a third thickness.
5 more elements
A system comprising:
- a storage node of a memory cell, the storage node comprising:
- a bottom electrode;
- a first dielectric material formed on the bottom electrode;
- a first portion of a top electrode formed on the first dielectric material, wherein the first portion of the top electrode has a first thickness;
- a first metal oxide formed on the first portion of the top electrode, wherein the first metal oxide is a discontinuous layer separating the first portion of the top electrode from a second portion of the top electrode such that the first portion of the top electrode contacts the second portion of the top electrode through gaps in the first metal oxide;
- the second portion of the top electrode formed on the first metal oxide, wherein the second portion of the top electrode has a second thickness;
- a second metal oxide formed on the second portion of the top electrode, wherein the second metal oxide is a discontinuous layer separating the second portion of the top electrode and a third portion of the top electrode such that the second portion of the top electrode contacts the third portion of the top electrode through gaps in the second metal oxide;
- and
- the third portion of the top electrode formed on the second metal oxide, wherein the third portion of the top electrode has a third thickness, and wherein the first first portion of the top electrode and the dielectric material.
6 more elements
Dependencies are inferred from the claim text.