Method for manufacturing semiconductor device with reduced interfacial layer thickness

A method for manufacturing a semiconductor device, comprising:

• forming a semiconductor structure on a semiconductor substrate, the semiconductor structure including
• a first source/drain region and a second source/drain region which are disposed on the semiconductor substrate in a first direction normal to the semiconductor substrate and which are spaced apart from each other in a second direction transverse to the first direction, and
• a plurality of channel features which are disposed between and connected to the first source/drain region and the second source/drain region and which are spaced apart from one another in the first direction;
• subjecting the plurality of channel features to surface oxidation so as to form an interfacial material layer to cover each of the plurality of channel features;
• forming a metal oxide layer on the interfacial material layer;
• converting a portion of the interfacial material layer into a metal silicate layer so as to form a plurality of interfacial features respectively covering the plurality of channel features, the metal silicate layer being formed between the metal oxide layer and each of the plurality of interfacial features;
• and
• removing the metal oxide layer and the metal silicate layer.

A method for manufacturing a semiconductor device, comprising:

• forming a semiconductor structure on a semiconductor substrate, the semiconductor structure including
• a first source/drain region and a second source/drain region which are disposed on the semiconductor substrate in a first direction normal to the semiconductor substrate and which are spaced apart from each other in a second direction transverse to the first direction, and
• a plurality of channel features which are disposed between and connected to the first source/drain region and the second source/drain region and which are spaced apart from one another in the first direction;
• forming an interfacial material layer to cover each of the plurality of channel features;
• forming a metal oxide layer on the interfacial material layer;
• subjecting the interfacial material layer and the metal oxide layer to thermal treatment, so as to form a metal silicate layer and a plurality of interfacial features respectively covering the plurality of channel features, the metal silicate layer being formed between the metal oxide layer and each of the plurality of interfacial features;
• and
• removing the metal oxide layer and the metal silicate layer.