H10P 14/693
The material containing hafnium
Official title: {the material containing hafnium, e.g. HfSiOx or HfSiON}
H10P14/693 (The material containing hafnium) appears on 242 US grants and 315 published applications in this corpus.
Search patents in H10P- Granted patents
- 242
- Published applications
- 315
- Assignees
- 107
- Inventors
- 563
- Latest grant
- 11 Nov 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 3 | 1 |
| 2002 | 1 | 5 |
| 2003 | 7 | 12 |
| 2004 | 11 | 13 |
| 2005 | 10 | 23 |
| 2006 | 10 | 25 |
| 2007 | 6 | 32 |
| 2008 | 7 | 24 |
| 2009 | 18 | 28 |
| 2010 | 23 | 14 |
| 2011 | 16 | 11 |
| 2012 | 18 | 12 |
| 2013 | 9 | 9 |
| 2014 | 7 | 10 |
| 2015 | 16 | 10 |
| 2016 | 11 | 13 |
| 2017 | 14 | 13 |
| 2018 | 11 | 8 |
| 2019 | 6 | 9 |
| 2020 | 4 | 7 |
| 2021 | 9 | 8 |
| 2022 | 5 | 8 |
| 2023 | 4 | 7 |
| 2024 | 8 | 5 |
| 2025 | 7 | 7 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Preparation method for capacitor structure, capacitor structure, and memory11 Nov 2025US 12,469,697 B2Changxin Memory Technologies, Inc.
- High-K capacitor dielectric having a metal oxide area comprising boron, electrical device and semiconductor apparatus including the same9 Sep 2025US 12,414,313 B2Samsung Electronics Co., Ltd.
- Semiconductor device with fin structures24 Jun 2025US 12,342,605 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Ferroelectric semiconductor device and method17 Jun 2025US 12,336,216 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Oxide-nitride-oxide stack having multiple oxynitride layers1 Apr 2025US 12,266,521 B2Longitude Flash Memory Solutions Ltd.
- Methods of manufacturing semiconductor devices17 Sep 2026US 2026/0282773 A1APPLIED Materials.Inc.
- N/p mos gate stack and method of manufacturing the same11 Dec 2025US 2025/0380505 A1Samsung Electronics Co., Ltd.
- Electrical device and semiconductor apparatus including the same6 Nov 2025US 2025/0344417 A1Samsung Electronics Co., Ltd.
- Electrical device and semiconductor apparatus including the same25 Sep 2025US 2025/0301675 A1Samsung Electronics Co., Ltd.
- Semiconductor device with dielectric structure11 Sep 2025US 2025/0287680 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- System and method for forming a gate dielectric598US 6,858,547 B2APPLIED Materials.Inc. · 2005
- Pretreatment processes within a batch ALD reactor566US 7,402,534 B2APPLIED Materials.Inc. · 2008
- Atomic layer deposition of hafnium-based high-k dielectric560US 7,205,247 B2Aviza Technology, Inc. · 2007
- Method of manufacturing charge storage device553US 7,405,166 B2Industrial Technology Research Institute · 2008
- Method of growing oxide thin films546US 7,824,492 B2ASM International N.V. · 2010