Methods of manufacturing semiconductor devices
AssigneeApplied Materials, Inc.
InventorsYuxin Wang, Ying-Bing Jiang, Joung Joo Lee
Life of this patent
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Abstract
Methods of manufacturing semiconductor devices are described. The methods include depositing a molybdenum silicide layer directly on a substrate; depositing an interfacial layer directly on the molybdenum silicide layer; and depositing a metal nitride layer directly on the interfacial layer. The interfacial layer includes a metal silicide having a formula of MSix, where M is a metal and x is an integer in a range of from 1 to 3 or a metal silicon nitride having a formula MSiN where M is the metal.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- depositing a molybdenum silicide (MoSi) layer directly on a substrate;
- depositing an interfacial layer directly on the molybdenum silicide (MoSi) layer, the interfacial layer comprising a metal silicide having a formula of MSix, where M is a metal and x is an integer in a range of from 1 to 3 or a metallic silicon nitride having a formula MSiN where M is the metal;
- and
- depositing a metal nitride layer directly on the interfacial layer.
A method of manufacturing a semiconductor device, the method comprising:
- depositing a molybdenum silicide (MoSi) layer directly on a substrate having a top surface and at least one feature including sidewalls and a bottom surface;
- depositing an interfacial layer directly on the molybdenum silicide (MoSi) layer, the interfacial layer comprising a metal silicide having a formula of MSix, where M is a metal and x is an integer in a range of from 1 to 3 or a metal silicon nitride having a formula MSiN where M is the metal;
- and
- depositing a metal nitride layer directly on the interfacial layer.
A non-transitory computer readable medium including instructions, that, when executed by a controller of a processing system, causes the processing system to:
- deposit a molybdenum silicide (MoSi) layer directly on a substrate;
- deposit an interfacial layer directly on the molybdenum silicide (MoSi) layer, the interfacial layer comprising a metal silicide having a formula of MSix, where M is a metal and x is an integer in a range of from 1 to 3 or a metal silicon nitride having a formula MSiN where M is the metal;
- and
- deposit a metal nitride layer directly on the interfacial layer.
Dependencies are inferred from the claim text.