High-K capacitor dielectric having a metal oxide area comprising boron, electrical device and semiconductor apparatus including the same

An electrical device comprising:

• a lower electrode;
• an upper electrode isolated from direct contact with the lower electrode;
• and
• a dielectric layer between the lower electrode and the upper electrode,
• wherein the dielectric layer comprises
• a first metal oxide area,
• a second metal oxide area, and
• a third metal oxide area between the first metal oxide area and the second metal oxide area,
• wherein the third metal oxide area comprises boron (B) and at least one of Al, Mg, Si, or Be, such that a concentration of the boron in the dielectric layer, as measured from the lower electrode, at a position between 40% to 90% a thickness of the dielectric layer is greater than the concentration of the boron in the dielectric layer lower than the position between 40% to 90% the thickness of the dielectric layer.