Preparation method for capacitor structure, capacitor structure, and memory
AssigneeChangxin Memory Technologies, Inc.
InventorsXingsong Su, Weiping Bai, Mengkang Yu, Lianhong Wang
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Abstract
A preparation method for the capacitor structure includes: forming a dielectric layer on a first electrode, wherein, the dielectric layer includes a first amorphous layer and a high dielectric constant layer which are stacked, the first amorphous layer maintaining an amorphous structure after annealing, and the high dielectric constant layer being formed by crystallizing an initial dielectric constant layer after annealing; and forming a second electrode on the dielectric layer. Since the first amorphous layer remains an amorphous structure after annealing, electron transport can be suppressed, thereby reducing the leakage current of the capacitor structure.
Claims17
A preparation method for a capacitor structure, comprising:
- forming a dielectric layer on a first electrode,
- wherein the dielectric layer comprises a first amorphous layer and a high dielectric constant layer and a second amorphous layer arranged in a stack, the first amorphous layer has an amorphous structure, and the high dielectric constant layer is formed by crystallizing an initial dielectric constant layer after annealing;
- and
- forming a second electrode on the dielectric layer;
- wherein the high dielectric constant layer has a dielectric constant of 40-300;
- wherein the material of the first amorphous layer comprises aluminum titanate, and a mass concentration of aluminum in the aluminum titanate is 10%-50%;
- and
- the first amorphous layer has a thickness of 0.5-5 nm.
A capacitor structure, comprising:
- a first electrode, a dielectric layer, and a second electrode, wherein
- the first electrode and the second electrode are disposed opposing each other, and the dielectric layer is located between the first electrode and the second electrode and is in contact with the first electrode and the second electrode;
- the dielectric layer comprises a first amorphous layer, a high dielectric constant layer, and a second amorphous layer arranged in a stack;
- the first amorphous layer is in contact with the first electrode, the second amorphous layer is in contact with the second electrode, and the high dielectric constant layer is located between the first amorphous layer and the second amorphous layer and is in contact with the first amorphous layer and the second amorphous layer;
- and
- the first amorphous layer has an amorphous structure, and the high dielectric constant layer is formed by crystallizing an initial dielectric constant layer after annealing;
- and
- wherein the high dielectric constant layer has a dielectric constant of 40-300;
- wherein the material of the first amorphous layer comprises aluminum titanate, and a mass concentration of aluminum in the aluminum titanate is 10%-50%;
- and
- the first amorphous layer has a thickness of 0.5-5 nm.
A memory device, comprising:
- a transistor;
- and
- a capacitor structure comprising:
- a first electrode, a dielectric layer, and a second electrode, wherein
- the first electrode and the second electrode are disposed opposing each other, and the dielectric layer is located between the first electrode and the second electrode and is in contact with the first electrode and the second electrode;
- the dielectric layer comprises a first amorphous layer, a high dielectric constant layer, and a second amorphous layer arranged in a stack;
- the first amorphous layer is in contact with the first electrode, the second amorphous layer is in contact with the second electrode, and the high dielectric constant layer is located between the first amorphous layer and the second amorphous layer and is in contact with the first amorphous layer and the second amorphous layer;
- and
- the first amorphous layer has an amorphous structure, and the high dielectric constant layer is formed by crystallizing an initial dielectric constant layer after annealing;
- and
- wherein the high dielectric constant layer has a dielectric constant of 40-300;
- wherein the material of the first amorphous layer comprises aluminum titanate, and a mass concentration of aluminum in the aluminum titanate is 10%-50%;
- and
- the first amorphous layer has a thickness of 0.5-5 nm.
Dependencies are inferred from the claim text.