Atomic layer deposition of hafnium-based high-k dielectric
AssigneeAviza Technology, Inc.
InventorsSang-In Lee, Jon S. Owyang, Yoshihide Senzaki, Aubrey L. Helms, Jr., Karem Kapkin
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Abstract
A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafnium-based dielectric layer formed atop the substrate, and an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.
Claims13
A method of depositing a hafnium-based dielectric film comprising the step of atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor wherein the hafnium precursor comprises TDMAHf, TDEAHf, Hf(MMP)4, or TEMAHf.
A semiconductor device comprising:
- a substrate;
- a hafnium-based dielectric layer formed atop the substrate;
- and
- an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.
Dependencies are inferred from the claim text.