H10P 14/6932
The material containing titanium
Official title: {the material containing titanium, e.g. TiSiOx}
H10P14/6932 (The material containing titanium) appears on 94 US grants and 100 published applications in this corpus.
Search patents in H10P- Granted patents
- 94
- Published applications
- 100
- Assignees
- 39
- Inventors
- 182
- Latest grant
- 17 Mar 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 4 | 2 |
| 2002 | 1 | 0 |
| 2003 | 2 | 4 |
| 2004 | 2 | 2 |
| 2005 | 2 | 4 |
| 2006 | 3 | 7 |
| 2007 | 0 | 3 |
| 2008 | 1 | 1 |
| 2009 | 5 | 4 |
| 2010 | 5 | 4 |
| 2011 | 6 | 3 |
| 2012 | 1 | 4 |
| 2013 | 3 | 0 |
| 2014 | 2 | 1 |
| 2015 | 6 | 13 |
| 2016 | 16 | 7 |
| 2017 | 0 | 2 |
| 2018 | 3 | 3 |
| 2019 | 2 | 1 |
| 2020 | 3 | 5 |
| 2021 | 1 | 4 |
| 2022 | 5 | 7 |
| 2023 | 4 | 9 |
| 2024 | 8 | 4 |
| 2025 | 4 | 3 |
| 2026 | 1 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Gate structures for semiconductor devices17 Mar 2026US 12,581,725 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Gate structure fabrication techniques for reducing gate structure warpage14 Oct 2025US 12,444,598 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Growth inhibitor for forming thin film, method of forming thin film using growth inhibitor, and semiconductor substrate fabricated by method23 Sep 2025US 12,421,599 B2Soulbrain Co., Ltd.
- Method for forming metal silicon oxide and metal silicon oxynitride layers20 May 2025US 12,305,281 B2ASM IP Holding B. V.
- Selective removal of an etching stop layer for improving overlay shift tolerance28 Jan 2025US 12,211,700 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of manufacturing semiconductor devices17 Sep 2026US 2026/0282773 A1APPLIED Materials.Inc.
- Gate structures for semiconductor devices2 Jul 2026US 2026/0190452 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium5 Mar 2026US 2026/0068558 A1Kokusai Electric Corporation
- Gate Structure Fabrication Techniques for Reducing Gate Structure Warpage13 Nov 2025US 2025/0349531 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Selective Removal of an Etching Stop Layer for Improving Overlay Shift Tolerance22 May 2025US 2025/0167002 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of growing oxide thin films546US 7,824,492 B2ASM International N.V. · 2010
- Method of forming metal oxide hardmask544US 8,901,016 B2ASM Japan K .K. · 2014
- Atomic layer deposition and conversion537US 7,589,029 B2Micron Technology, Inc. · 2009
- Method of forming metal oxide hardmask534US 9,171,716 B2ASM Japan K .K. · 2015
- Multilayer ceramic coatings from silicate esters and metal oxides485US 4,753,856 ADow Corning Corporation · 1988