Growth inhibitor for forming thin film, method of forming thin film using growth inhibitor, and semiconductor substrate fabricated by method

A method of forming a thin film, consisting of injecting a thin film-forming growth inhibitor into an ALD chamber and adsorbing the thin film-forming growth inhibitor and a precursor compound on a surface of a loaded substrate;

• vaporizing a precursor compound for forming a thin film and adsorbing the precursor compound on the surface of the substrate loaded into the ALD chamber;
• and
• supplying a reaction gas into the ALD chamber:
• wherein the thin film-forming growth inhibitor is selected from the group consisting of tert-butyl bromide, 1-methyl-1-bromocyclohexane, tert-butyl iodide, and tert-butyl chloride and is in a liquid state at room temperature (22° C.) and has a density of 0.8 to 1.5 g/cm3, a vapor pressure (20° C.) of 1 to 300 mmHg, and a solubility (25° C.) of 200 mg/L or less in water,
• wherein the growth inhibitor for forming a thin film and the precursor compound for forming a thin film are transferred into the ALD chamber by a VFC method, a DLI method, or an LDS method,
• wherein a ratio of an amount (mg/cycle) of the growth inhibitor for forming a thin film to an amount (mg/cycle) of the precursor compound for forming a thin film fed into the ALD chamber is 1:1.5 to 1:20, and
• wherein the reaction gas is a reducing agent, a nitrifying agent, or an oxidizing agent.