Method for forming metal silicon oxide and metal silicon oxynitride layers
AssigneeASM IP Holding B.V.
InventorsTakashi Yoshida, René Vervuurt
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Abstract
Methods of forming metal silicon oxide layers and metal silicon oxynitride layers are disclosed. Exemplary methods include providing a silicon precursor to the reaction chamber for a silicon precursor pulse period, providing a first metal precursor to the reaction chamber for a first metal precursor pulse period, and providing a first reactant to the reaction chamber for a first reactant pulse period, wherein the silicon precursor pulse period and the first metal precursor pulse period overlap.
Claims20
A method of forming one or more of a metal silicon oxide layer and a metal silicon oxynitride layer, the method comprising the steps of:
- providing a substrate within a reaction chamber of a reactor;
- providing a silicon precursor to the reaction chamber for a silicon precursor pulse period;
- providing a first metal precursor to the reaction chamber for a first metal precursor pulse period;
- and
- providing a first reactant to the reaction chamber for a first reactant pulse period,
- wherein the first reactant pulse period overlaps with the silicon precursor pulse period and the first metal precursor pulse period, and
- wherein a plasma is applied for a plasma period during the step of providing the first reactant.
Dependencies are inferred from the claim text.