H10P 14/6931
The material containing tantalum
Official title: {the material containing tantalum, e.g. TaSiOx}
H10P14/6931 (The material containing tantalum) appears on 39 US grants and 36 published applications in this corpus.
Search patents in H10P- Granted patents
- 39
- Published applications
- 36
- Assignees
- 35
- Inventors
- 98
- Latest grant
- 31 Dec 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 1 | 1 |
| 2002 | 0 | 1 |
| 2003 | 4 | 4 |
| 2004 | 3 | 1 |
| 2005 | 0 | 1 |
| 2006 | 1 | 2 |
| 2007 | 0 | 4 |
| 2008 | 0 | 2 |
| 2009 | 3 | 2 |
| 2010 | 4 | 2 |
| 2011 | 3 | 1 |
| 2012 | 2 | 3 |
| 2013 | 1 | 2 |
| 2014 | 2 | 1 |
| 2015 | 4 | 3 |
| 2016 | 2 | 0 |
| 2017 | 0 | 1 |
| 2018 | 1 | 1 |
| 2019 | 0 | 1 |
| 2020 | 1 | 2 |
| 2021 | 0 | 0 |
| 2022 | 1 | 1 |
| 2023 | 2 | 0 |
| 2024 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Film formation method and film formation device31 Dec 2024US 12,183,572 B2Tokyo Electron Limited
- Low deposition rates for flowable PECVD14 Feb 2023US 11,578,409 B2APPLIED Materials.Inc.
- Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium24 Jan 2023US 11,562,905 B2Kokusai Electric Corporation
- Plasma enhanced deposition processes for controlled formation of metal oxide thin films15 Nov 2022US 11,501,965 B2ASM IP Holding B. V.
- Tantalum compound12 May 2020US 10,651,031 B2Adeka Corporation
- Film formation method and film formation device9 Jun 2022US 2022/0181144 A1Tokyo Electron Limited
- Low deposition rates for flowable pecvd10 Dec 2020US 2020/0385865 A1APPLIED Materials.Inc.
- Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium9 Jul 2020US 2020/0219727 A1Kokusai Electric Corporation
- Tantalum compound7 Mar 2019US 2019/0074175 A1Adeka Corporation
- Plasma enhanced deposition processes for controlled formation of metal oxide thin films6 Dec 2018US 2018/0350587 A1ASM IP Holding B. V.
Most cited
By later US patents
- Method of growing oxide thin films546US 7,824,492 B2ASM International N.V. · 2010
- Method of forming metal oxide hardmask544US 8,901,016 B2ASM Japan K .K. · 2014
- Atomic layer deposition and conversion537US 7,589,029 B2Micron Technology, Inc. · 2009
- Method of forming metal oxide hardmask534US 9,171,716 B2ASM Japan K .K. · 2015
- Integrated process for fabrication of graded composite dielectric material layers for semiconductor devices166US 6,586,349 B1Advanced Micro Devices, Inc. · 2003