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US 11,578,409 B2Granted
Low deposition rates for flowable PECVD
AssigneeApplied Materials, Inc.
InventorsShishi Jiang, Pramit Manna, Abhijit Basu Mallick
Life of this patent
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Abstract
PECVD methods for depositing a film at a low deposition rate comprising intermittent activation of the plasma are disclosed. The flowable film can be deposited using at least a polysilane precursor and a plasma gas. The deposition rate of the disclosed processes may be less than 500 Å/min.
Claims20
A method comprising:
- simultaneously exposing a substrate surface having at least one feature thereon to reactants comprising a polysilane precursor and a plasma gas;
- and
- igniting the plasma gas at a regular interval to form a plasma and deposit a flowable film on the substrate surface within the at least one feature, the flowable film deposited at a rate of less than or equal to about 500 Å/min.
A method comprising:
- simultaneously exposing a substrate surface having at least one feature thereon to reactants comprising a polysilane precursor and a plasma gas;
- igniting the plasma gas at a regular interval to form a plasma and deposit a flowable silicon-containing film on the substrate surface within the at least one feature, the regular interval having a duty cycle less than 40%, and the flowable silicon-containing film being deposited at a rate of less than or equal to about 500 Å/min;
- and
- curing the flowable film to form a substantially seam-free gapfill.
1 more element
A method comprising:
- simultaneously exposing a substrate surface having at least one feature thereon to reactants comprising a polysilane precursor and a plasma gas, the polysilane precursor comprising one or more of disilane, trisilane, tetrasilane, neopentasilane, or cyclohexasilane, the plasma gas comprising one or more of He, Ar, Kr, H2, N2, O2, O3 or NH3;
- igniting the plasma gas at a regular interval to form a plasma and deposit a flowable film on the substrate surface within the at least one feature, the regular interval having a duty cycle less than 40%, the plasma having a power less than or equal to about 200 W, the film consisting essentially of silicon, the substrate surface being maintained at a temperature of less than or equal to about 50° C., and the flowable film being deposited at a rate of less than or equal to about 250 Å/min;
- and
- curing the flowable film to form a substantially seam-free gapfill.
1 more element
Dependencies are inferred from the claim text.