Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
AssigneeKokusai Electric Corporation
InventorsMotomu DEGAI, Hiroshi ASHIHARA
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Abstract
There is provided a technique that includes selectively doping a metal film with a dopant by performing: supplying a dopant-containing gas containing the dopant to a substrate in which the metal film and a film other than the metal film are formed on a film in which the dopant is doped; and removing the dopant-containing gas from above the substrate.
Claims14
A method of manufacturing a semiconductor device, comprising:
- selectively doping a metal film with a dopant by performing:
- supplying a dopant-containing gas containing the dopant to a substrate in which the metal film and a film other than the metal film are formed on a film in which the dopant is doped;
- and
- removing the dopant-containing gas from above the substrate.
A method of manufacturing a semiconductor device, comprising:
- selectively doping a metal film with a dopant by sequentially repeating, multiple times:
- supplying a first dopant-containing gas containing the dopant to a substrate in which the metal film and a film other than the metal film are formed on a film in which the dopant is doped;
- removing the first dopant-containing gas from above the substrate;
- supplying a second dopant-containing gas containing the dopant to above the substrate;
- and
- removing the second dopant-containing gas from above the substrate.
A substrate processing apparatus comprising:
- a process chamber that accommodates a substrate;
- a gas supply system configured to supply a dopant-containing gas containing a dopant to the substrate in the process chamber;
- an exhaust system configured to exhaust an interior of the process chamber;
- and
- a controller configured to control the gas supply system and the exhaust system so as to perform a process including:
- selectively doping a metal film with the dopant by performing:
- supplying the dopant-containing gas to the substrate, which is accommodated in the process chamber, in which the metal film and a film other than the metal film are formed on a film in which the dopant is doped;
- and
- exhausting the dopant-containing gas from the process chamber.
A substrate processing apparatus comprising:
- a process chamber that accommodates a substrate;
- a gas supply system configured to supply a first dopant-containing gas containing a dopant and a second dopant-containing gas, which is different from the first dopant-containing gas, containing the dopant to the substrate in the process chamber;
- an exhaust system configured to exhaust an interior of the process chamber;
- and
- a controller configured to control the gas supply system and the exhaust system so as to perform a process including:
- selectively doping a metal film with the dopant by sequentially repeating, multiple times:
- supplying the first dopant-containing gas to the substrate, which is accommodated in the process chamber, in which the metal film and a film other than the metal film are formed on a film in which the dopant is doped;
- exhausting the first dopant-containing gas from the process chamber;
- supplying the second dopant-containing gas to the substrate which is accommodated in the process chamber;
- and
- exhausting the second dopant-containing gas from the process chamber.
A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:
- selectively doping a metal film with a dopant by performing:
- supplying a dopant-containing gas containing the dopant to a substrate, which is accommodated in a process chamber of the substrate processing apparatus, in which the metal film and a film other than the metal film are formed on a film in which the dopant is doped;
- and
- removing the dopant-containing gas from above the substrate.
A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:
- selectively doping a metal film with a dopant by sequentially repeating, multiple times:
- supplying a first dopant-containing gas containing the dopant to a substrate, which is accommodated in a process chamber of the substrate processing apparatus, in which the metal film and a film other than the metal film are formed on a film in which the dopant is doped;
- removing the first dopant-containing gas from above the substrate;
- supplying a second dopant-containing gas containing the dopant to above the substrate;
- and
- removing the second dopant-containing gas from above the substrate.
Dependencies are inferred from the claim text.