Back to results
US 11,562,905 B2Granted
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
AssigneeKokusai Electric Corporation
InventorsMotomu Degai, Hiroshi Ashihara
Life of this patent
Estimating the term…
Abstract
There is provided a technique that includes selectively doping a metal film with a dopant by performing: supplying a dopant-containing gas containing the dopant to a substrate in which the metal film and a film other than the metal film are formed on a film in which the dopant is doped; and removing the dopant-containing gas from above the substrate.
Claims16
A method of processing a substrate, comprising:
- selectively doping a metal film with a dopant by performing:
- supplying a dopant-containing gas containing the dopant to the substrate that includes:
- a base film with the dopant doped;
- and
- the metal film and a film other than the metal film that are formed on the base film;
- and
- removing the dopant-containing gas from above the substrate,
- wherein the metal film acts as a catalyst that decomposes the dopant-containing gas to thereby diffuse the dopant from the decomposed dopant-containing gas into only the metal film and not the film other than the metal film, and the film other than the metal film does not act as the catalyst.
5 more elements
A method of processing a substrate, comprising:
- selectively doping a metal film with a dopant by sequentially repeating, multiple times:
- supplying a first dopant-containing gas containing the dopant to the substrate that includes:
- a base film with the dopant doped;
- and
- the metal film and a film other than the metal film that are formed on the base film;
- removing the first dopant-containing gas from above the substrate;
- supplying a second dopant-containing gas containing the dopant to above the substrate;
- and
- removing the second dopant-containing gas from above the substrate,
- wherein the metal film acts as a catalyst that decomposes at least one selected from the group of the first dopant-containing gas and the second dopant-containing gas to thereby diffuse the dopant from the decomposed dopant-containing gas into only the metal film and not the film other than the metal film, and the film other than the metal film does not act as the catalyst.
7 more elements
A substrate processing apparatus comprising:
- a process chamber that accommodates a substrate;
- a gas supply system configured to supply a dopant-containing gas containing a dopant to the substrate in the process chamber;
- an exhaust system configured to exhaust an interior of the process chamber;
- and
- a controller configured to control the gas supply system and the exhaust system so as to perform a process including:
- selectively doping a metal film with the dopant by performing:
- supplying the dopant-containing gas to the substrate, which is accommodated in the process chamber, and includes:
- a base film with the dopant doped;
- and
- the metal film and a film other than the metal film that are formed on the base film;
- and
- exhausting the dopant-containing gas from the process chamber,
- wherein the metal film acts as a catalyst that decomposes the dopant-containing gas to thereby diffuse the dopant from the decomposed dopant-containing gas into only the metal film and not the film other than the metal film, and the film other than the metal film does not act as the catalyst.
10 more elements
A substrate processing apparatus comprising:
- a process chamber that accommodates a substrate;
- a gas supply system configured to supply a first dopant-containing gas containing a dopant and a second dopant-containing gas, which is different from the first dopant-containing gas, containing the dopant to the substrate in the process chamber;
- an exhaust system configured to exhaust an interior of the process chamber;
- and
- a controller configured to control the gas supply system and the exhaust system so as to perform a process including:
- selectively doping a metal film with the dopant by sequentially repeating, multiple times:
- supplying the first dopant-containing gas to the substrate, which is accommodated in the process chamber, and includes:
- a base film with the dopant doped;
- and
- the metal film and a film other than the metal film that are formed on the base film;
- exhausting the first dopant-containing gas from the process chamber;
- supplying the second dopant-containing gas to the substrate which is accommodated in the process chamber;
- and
- exhausting the second dopant-containing gas from the process chamber,
- wherein the metal film acts as a catalyst that decomposes at least one selected from the group of the first dopant-containing gas and the second dopant-containing gas to thereby diffuse the dopant from the decomposed dopant-containing gas into only the metal film and not the film other than the metal film, and the film other than the metal film does not act as the catalyst.
12 more elements
A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:
- selectively doping a metal film with a dopant by performing:
- supplying a dopant-containing gas containing the dopant to a substrate, which is accommodated in a process chamber of the substrate processing apparatus, and includes:
- a base film with the dopant doped;
- and
- the metal film and a film other than the metal film that are formed on the base film;
- and
- removing the dopant-containing gas from above the substrate,
- wherein the metal film acts as a catalyst that decomposes the dopant-containing gas to thereby diffuse the dopant from the decomposed dopant-containing gas into only the metal film and not the film other than the metal film, and the film other than the metal film does not act as the catalyst.
5 more elements
A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:
- selectively doping a metal film with a dopant by sequentially repeating, multiple times:
- supplying a first dopant-containing gas containing the dopant to a substrate, which is accommodated in a process chamber of the substrate processing apparatus, and includes:
- a base film with the dopant doped;
- and
- the metal film and a film other than the metal film that are formed on the base film;
- removing the first dopant-containing gas from above the substrate;
- supplying a second dopant-containing gas containing the dopant to above the substrate;
- and
- removing the second dopant-containing gas from above the substrate,
- wherein the metal film acts as a catalyst that decomposes at least one selected from the group of the first dopant-containing gas and the second dopant-containing gas to thereby diffuse the dopant from the decomposed dopant-containing gas into only the metal film and not the film other than the metal film, and the film other than the metal film does not act as the catalyst.
7 more elements
Dependencies are inferred from the claim text.