Plasma enhanced deposition processes for controlled formation of metal oxide thin films

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A plasma enhanced atomic layer deposition (PEALD) process for selectively depositing a metal oxide on a dielectric surface relative to a metal surface of a substrate comprising:

• providing a substrate comprising a first dielectric surface and a second metal surface;
• conducting at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first metal precursor comprising oxygen and a second reactant comprising plasma generated in a gas comprising hydrogen but not oxygen;
• wherein the species of the first metal precursor are adsorbed on the dielectric surface and the second plasma reactant reacts with the adsorbed species to selectively form a metal oxide on the first dielectric surface relative to the second metal surface.

A plasma enhanced atomic layer deposition (PEALD) process for selectively depositing an oxide comprising silicon and metal on a dielectric surface of a substrate relative to a metal surface of the substrate comprising:

• conducting at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first metal precursor comprising oxygen, a second silicon precursor comprising oxygen, and a third reactant comprising plasma generated in a gas comprising hydrogen but not oxygen;