H10P 14/6936
The material containing two or more metal elements
Official title: {the material containing two or more metal elements}
H10P14/6936 (The material containing two or more metal elements) appears on 83 US grants and 84 published applications in this corpus.
Search patents in H10P- Granted patents
- 83
- Published applications
- 84
- Assignees
- 43
- Inventors
- 144
- Latest grant
- 2 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 1 |
| 2002 | 0 | 0 |
| 2003 | 3 | 2 |
| 2004 | 2 | 3 |
| 2005 | 1 | 7 |
| 2006 | 1 | 4 |
| 2007 | 1 | 7 |
| 2008 | 3 | 3 |
| 2009 | 6 | 7 |
| 2010 | 7 | 3 |
| 2011 | 3 | 0 |
| 2012 | 4 | 6 |
| 2013 | 3 | 0 |
| 2014 | 2 | 5 |
| 2015 | 6 | 12 |
| 2016 | 19 | 10 |
| 2017 | 1 | 2 |
| 2018 | 3 | 0 |
| 2019 | 1 | 0 |
| 2020 | 0 | 2 |
| 2021 | 0 | 3 |
| 2022 | 3 | 2 |
| 2023 | 4 | 4 |
| 2024 | 0 | 0 |
| 2025 | 2 | 0 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Epitaxial strontium titanate on silicon2 Jun 2026US 12,648,373 B2Psiquantum, Corp.
- Ferroelectric semiconductor device and method17 Jun 2025US 12,336,216 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method for forming same3 Jun 2025US 12,322,589 B2Changxin Memory Technologies, Inc.
- Ferroelectric semiconductor device and method26 Dec 2023US 11,855,221 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Germanium mediated de-oxidation of silicon16 May 2023US 11,651,956 B2Psiquantum, Corp.
- Epitaxial strontium titanate on silicon10 Sep 2026US 2026/0271631 A1Psiquantum, Corp.
- Ferroelectric Semiconductor Device and Method30 Nov 2023US 2023/0387310 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Film forming method9 Nov 2023US 2023/0357923 A1Tokyo Electron Limited
- Epitaxial strontium titanate on silicon22 Jun 2023US 2023/0197443 A1Psiquantum, Corp.
- Semiconductor structure and method for forming same20 Apr 2023US 2023/0118405 A1Changxin Memory Technologies, Inc.
Most cited
By later US patents
- Integrated process for fabrication of graded composite dielectric material layers for semiconductor devices166US 6,586,349 B1Advanced Micro Devices, Inc. · 2003
- Semiconductor device34US 4,561,009 ATokyo Shibaura Denki Kabushiki Kaisha · 1985
- Semiconductor device having a high-K gate dielectric and method of manufacture thereof30US 6,723,581 B1Agere Systems Inc. · 2004
- Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon25US 7,351,993 B2Translucent Photonics, Inc. · 2008
- Semiconductor device and a method for manufacturing the same23US 4,433,004 ATokyo Shibaura Denki Kabushiki Kaisha · 1984