Semiconductor device having a high-K gate dielectric and method of manufacture thereof
AssigneeAgere Systems Inc.
InventorsYves Jean Chabal, Martin Laurence Green, Glen David Wilk
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Abstract
The present invention provides a method of manufacturing a semiconductor device comprising, providing a semiconductor substrate, forming a substantially-hydroxylated SiOxHy layer on the semiconductor substrate in a presence of oxygen and hydrogen, and forming a metallic oxide, high-K dielectric layer on the substantially-hydroxylated SiOxHy layer. The substantially-hydroxylated SiOxHy layer has a surface concentration of hydroxyl (OH) species equal to or greater than about 3×1014 hydroxyl per cm2.
Claims20
A method of manufacturing a semiconductor device, comprising:
- providing a semiconductor substrate;
- forming a substantially-hydroxylated SiOxHy layer on said semiconductor substrate in a presence of oxygen and hydrogen by immersing said substrate in a solution comprising de-ionized water and an oxygen containing compound, said substantially-hydroxylated SiOxHy layer having a surface concentration of hydroxyl (OH) species equal to or greater than about 3×1014 hydroxyl per cm2;
- and
- forming a metallic oxide, high-K dielectric layer on said substantially-hydroxylated SiOxHy layer.
A method of manufacturing an integrated circuit, comprising:
- forming a transistor on a semiconductor substrate, including:
- creating a gate on said semiconductor substrate, including:
- forming a substantially-hydroxylated SiOxHy layer on said semiconductor substrate in a presence of oxygen and hydrogen by immersing said substrate in a solution comprising de-ionized water and an oxygen containing compound, said substantially-hydroxylated SiOxHy layer having a surface concentration of hydroxyl (OH) species equal to or greater than about 3×1014 hydroxyl per cm2;
- and
- forming a metallic oxide, high-K dielectric layer on said substantially-hydroxylated SiOxHy layer;
- and
- forming source/drain regions associated with said gate;
- and interconnecting said transistor with other transistors to form an operative integrated circuit.
Dependencies are inferred from the claim text.