Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon
AssigneeTranslucent Photonics, Inc.
InventorPetar B. Atanackovic
Life of this patent
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Abstract
Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula RE-(O, N, P)-(Si,Ge) are also disclosed, where RE=at least one selection from group of rare-earth metals, O=oxygen, N=nitrogen, P=phosphorus, Si=silicon and Ge=germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices.
Claims17
A field effect transistor, comprising:
- at least a first and second dielectric layers, wherein at least one of the layers
- comprises a material of composition [Z]u[RE1]v[RE2]w[RE3]x[J1]y[J2]z wherein [RE] is chosen from a group comprising Lanthanum (La), Cerium (Ce), Praseodymium (Pr), Neodymium (Nd), Promethium (Pm), Samarium (Sm), Europium (Eu), Gadolinium (Gd), Terbium (Tb), Dysprosium (Dy), Holmium (Ho), Erbium (Er), Thulium (Tm), Ytterbium (Yb) and Luthium (Lu), [Z] is chosen from a group comprising silicon, germanium and SiGe mixtures, [J1] and [J2] are chosen from a group comprising Oxygen (O), Nitrogen (N), and Phosphorus(P),and 0≦u, v, w, z≦5;0<x, y5;
- and
- at least a first semiconductor layer such that at least one semiconductor layer is positioned between the first and second dielectric layers such that at least one dielectric layer and one semiconductor layer are single crystal.
A semiconductor device, comprising:
- a plurality of layers wherein at least one of the layers is a single crystal layer with at least one or more species of rare earth wherein at least one of the rare-earths is in a triply ionized (3+) state and at least one of the layers is a single crystal semiconductor layer such that at least one semiconductor layer and at least one of the at least one single crystal layers with at least one species of rare earth are in a predetermined state of elastic mechanical strain such that the semiconductor layer is in a different predetermined state of elastic mechanical strain than the dielectric layer.
Dependencies are inferred from the claim text.