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US 4,561,009 AGranted
Semiconductor device
AssigneeTokyo Shibaura Denki Kabushiki Kaisha
InventorsToshio Yonezawa, Masaharu Aoyama
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Abstract
A semiconductor device is disclosed which includes a semiconductor substrate; a metal wiring layer comprising an Al alloy formed on the surface of this substrate; and an alumina layer covering this metal layer and containing at least one metal selected from the group consisting of Cu, Mg, Ni, Cr, Mn, Ti and Y. A method for manufacturing such a semiconductor device is also disclosed.
Claims9
A semiconductor device comprising a semiconductor substrate;
- a metal wiring layer comprising an Al alloy formed on the surface of said substrate;
- and means for blocking water and Na, said means comprising an alumina layer covering said metal layer and containing at least one metal selected from the group consisting of Cu, Mg, Ni, Cr, Mn, Ti and Y.
A seminconductor device comprising a semiconductor substrate;
- an insulating layer formed on the surface of said substrate and having an opening;
- a metal wiring layer connected through said opening to said semiconductor substrate and comprising an Al alloy;
- means for blocking water and Na, said means comprising an alumina layer formed on the surface of said metal layer and containing at least one metal selected from the group consisting of Cu, Mg, Ni, Cr, Mn, Ti and Y;
- and an opening formed in said alumina layer for connecting an electrode.
1 more element
Dependencies are inferred from the claim text.