Epitaxial strontium titanate on silicon

Abstract

A substrate structure includes a silicon-based wafer having a surface and a transition layer disposed on the surface of the silicon-based wafer. The silicon-based wafer can be a single crystal silicon wafer. The transition layer includes silicon oxide. The substrate structure also includes a crystalline strontium titanate layer disposed on the transition layer. The transition layer can also include amorphous silicon-germanium oxide regions or regions of strontium silicon oxide or strontium germanium oxide, for example, amorphous strontium germanium oxide.

Dependencies are inferred from the claim text.