Semiconductor device and a method for manufacturing the same
AssigneeTokyo Shibaura Denki Kabushiki Kaisha
InventorsToshio Yonezawa, Masaharu Aoyama
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Abstract
A semiconductor device is disclosed which includes a semiconductor substrate; a metal wiring layer comprising an Al alloy formed on the surface of this substrate; and an alumina layer covering this metal layer and containing at least one metal selected from the group consisting of Cu, Mg, Ni, Cr, Mn, Ti and Y. A method for manufacturing such a semiconductor device is also disclosed.
Claims11
A method for manufacturing a semiconductor device comprising the steps of forming a metal wiring layer comprising an Al alloy on the surface of a semiconductor substrate, and forming an alumina layer sufficiently thick for blocking water and Na containing at least one metal selected from the group consisting of Cu, Mg, Ni, Cr, Mn, Ti and Y on the surface of said metal wiring layer.
A method for manufacturing a semiconductor device comprising the steps of:
- forming on the surface of a semiconductor substrate a metal wiring layer of an Al alloy containing at least one metal selected from the group consisting of Cu, Mg, Ni, Cr, Mn, Ti and Y;
- and
- oxidizing said metal wiring layer so as to form on its surface an alumina layer sufficiently thick for blocking water and Na containing at least one metal selected from said group.
Dependencies are inferred from the claim text.