H10P 14/6934
The material containing zirconium
Official title: {the material containing zirconium, e.g. ZrSiOx}
H10P14/6934 (The material containing zirconium) appears on 98 US grants and 113 published applications in this corpus.
Search patents in H10P- Granted patents
- 98
- Published applications
- 113
- Assignees
- 52
- Inventors
- 241
- Latest grant
- 11 Nov 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 4 |
| 2002 | 3 | 2 |
| 2003 | 5 | 7 |
| 2004 | 9 | 8 |
| 2005 | 5 | 5 |
| 2006 | 5 | 5 |
| 2007 | 1 | 7 |
| 2008 | 2 | 11 |
| 2009 | 6 | 10 |
| 2010 | 7 | 2 |
| 2011 | 3 | 8 |
| 2012 | 7 | 7 |
| 2013 | 6 | 3 |
| 2014 | 5 | 6 |
| 2015 | 7 | 3 |
| 2016 | 5 | 5 |
| 2017 | 4 | 7 |
| 2018 | 4 | 2 |
| 2019 | 2 | 1 |
| 2020 | 1 | 1 |
| 2021 | 0 | 1 |
| 2022 | 3 | 4 |
| 2023 | 1 | 1 |
| 2024 | 2 | 2 |
| 2025 | 2 | 0 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Preparation method for capacitor structure, capacitor structure, and memory11 Nov 2025US 12,469,697 B2Changxin Memory Technologies, Inc.
- Ferroelectric semiconductor device and method17 Jun 2025US 12,336,216 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor Fin cutting process and structures formed thereby21 May 2024US 11,990,375 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and its formation method7 May 2024US 11,978,624 B2Changxin Memory Technologies, Inc.
- Ferroelectric semiconductor device and method26 Dec 2023US 11,855,221 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of manufacturing semiconductor devices17 Sep 2026US 2026/0282773 A1APPLIED Materials.Inc.
- Semiconductor Fin Cutting Process and Structures Formed Thereby22 Aug 2024US 2024/0282638 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods and applications of novel amorphous high-k metal-oxide dielectrics by super-cycle atomic layer deposition13 Jun 2024US 2024/0194479 A1APPLIED Materials.Inc.
- Ferroelectric Semiconductor Device and Method30 Nov 2023US 2023/0387310 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ferroelectric Semiconductor Device and Method17 Nov 2022US 2022/0367718 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of manufacturing charge storage device553US 7,405,166 B2Industrial Technology Research Institute · 2008
- Method of growing oxide thin films546US 7,824,492 B2ASM International N.V. · 2010
- Conformal thin films over textured capacitor electrodes542US 6,780,704 B1ASM International N.V. · 2004
- Method of forming dielectric films, new precursors and their use in semiconductor manufacturing541US 8,668,957 B2L Air Liquide, Societe Anonyme Pour L'Etude et L'Exploitation des Procedes Georges Claude · 2014
- Annealing of high-k dielectric materials538US 6,544,906 B2Texas Instruments Incorporated · 2003