Method of forming dielectric films, new precursors and their use in semiconductor manufacturing

A method of deposition on a substrate, of at least one metal containing dielectric film comprising a compound of the formula (I):

• (M11-aM2a)ObNc, (I)
• wherein:
• 0≦a<1,
• 0<b≧3;
• 0≦c≦1,
• M1 is zirconium (Zr);
• and
• M2 represents a metal atom selected from magnesium (Mg), calcium (Ca), zinc (Zn), boron (B), aluminum (Al), indium (In), silicon (Si), germanium (Ge), tin (Sn), hafnium (Hf), zirconium (Zr), titanium (Ti), vanadium (V), niobium (Nb), tantalum (Ta);
• and the Lanthanides atoms and rare-earth metal atoms,
• which comprises the following steps:
• a step a) of providing a substrate into a reaction chamber;
• a step b) of vaporizing at least one M1 metal containing precursor to form a first gas phase metal source, the at least one M1 metal containing precursor is selected from the group consisting of Zr(MeCp)(NMe2)3, Zr(EtCp)(NMe2)3, ZrCp(NMe2)3, Zr(MeCp)(NEtMe)3, Zr(EtCp)(NEtMe)3, ZrCp(NEtMe)3, Zr(MeCp)(NEt2)3, Zr(EtCp)(NEt2)3, ZrCp(NEt2)3, Zr(iPr2Cp)(NMe2)3, and Zr(tBu2 Cp)(NMe2)3;
• optionally a step b′) of vaporizing at least one M2 metal containing precursor, M2 being as hereinabove defined, to form an optional second gas phase metal source;
• a step c) of introducing said first gas phase metal source and said optional second gas phase metal source, in the reaction chamber, in order to provoke their contact with said substrate, to generate the deposition of a metal containing dielectric film comprising a compound of the formula (I) as hereinbefore defined, on said substrate.