Methods and applications of novel amorphous high-k metal-oxide dielectrics by super-cycle atomic layer deposition

A transistor structure, comprising:

• a gate;
• a source;
• a drain;
• and
• an amorphous oxide film separating the gate from at least one of the source or the drain,
• wherein the amorphous oxide film comprises a first oxide and a second oxide,
• wherein the first oxide comprises zirconium oxide (ZrO2), hafnium oxide (HfO2) or a combination thereof,
• wherein the second oxide comprises silicon dioxide (SiO2), aluminum oxide (Al2O3), nitric oxide (NO) or combinations thereof,
• wherein the amorphous oxide film comprises a porosity of less than about 1%, and
• wherein the amorphous oxide film comprises a dielectric constant (k) of about 8 to about 28.

A method of forming an amorphous oxide film, comprising:

• performing a plasma-enhanced atomic layer deposition (ALD) process to form an amorphous oxide film comprising a first oxide and a second oxide, wherein the first oxide comprises ZrO2, HfO2 or a combination thereof, wherein the second oxide comprises SiO2, Al2O3, NO, or combinations thereof, wherein the amorphous oxide film comprises a dielectric constant (k) of about 8 to about 28, and wherein performing the plasma-enhanced ALD process comprises:
• performing one or more ALD deposition super-cycles, each ALD deposition super-cycle comprising:
• performing one or more first ALD deposition cycles to deposit a first oxide layer of the first oxide;
• and
• performing one or more second ALD deposition cycles to deposit a second oxide layer to form the amorphous oxide layer of the second oxide.