Semiconductor Fin cutting process and structures formed thereby
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Wen Huang, Jaming Chang, Kai Hung Cheng, Chia-Hui Lin, Jei Ming Chen
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Abstract
Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin on a substrate, a second fin on the substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes an insulating liner and a fill material on the insulating liner. The insulating liner abuts a first sidewall of the first fin and a second sidewall of the second fin. The insulating liner includes a material with a band gap greater than 5 eV.
Claims20
A structure comprising:
- a first fin on a substrate;
- a second fin on the substrate, the first fin and the second fin being longitudinally aligned;
- a third fin on the substrate;
- a first insulating region and a second insulating region, the first fin and the second fin being between the first insulating region and the second insulating region, wherein the first fin and the second fin extend above an upper surface of the first insulating region and the second insulating region;
- and
- a gate structure extending over the third fin;
- a first gate spacer on a first side of the gate structure;
- a second gate spacer on a second side of the gate structure;
- a fin cut-fill structure disposed between the first fin and the second fin, the fin cut-fill structure comprising:
- an insulating liner along sidewalls of the first gate spacer and the second gate spacer, the insulating liner comprising a material with a band gap greater than 5 eV;
- and
- a fill material, the insulating liner surrounding the fill material in a plan view.
A structure comprising:
- a first fin protruding from a substrate;
- a second fin protruding from the substrate;
- a first gate structure over the substrate;
- a first insulator structure disposed between the first fin and the second fin, wherein a longitudinal axis of the first insulator structure is aligned with a longitudinal axis of the first gate structure, the first insulator structure comprising:
- a high band gap liner having a band gap greater than 5 eV;
- and
- a fill material, wherein the high band gap liner completely surrounds the fill material in a plan view, wherein the fill material is completely separated from the first fin, the second fin, and the substrate by the high band gap liner, wherein an upper surface of the high band gap liner is level with an upper surface of fill material and an upper surface of the first gate structure;
- and
- a first gate spacer extending continuously along sidewalls of the first gate structure and the first insulator structure.
A structure comprising:
- a first fin and a second fin on a substrate, the first fin and the second fin having a same first longitudinal axis;
- isolation regions along opposing sides of the first fin and the second fin, wherein the first fin and the second fin protrudes above an upper surface of the isolation regions;
- a first gate structure and a second gate structure;
- a gate cut structure interposed between the first gate structure and the second gate structure, the gate cut structure having a second longitudinal axis parallel to the first longitudinal axis;
- and
- a fin cut structure interposed between the first gate structure and the second gate structure, the fin cut structure having a third longitudinal axis parallel to the second longitudinal axis, wherein the fin cut structure extends into the gate cut structure in a plan view, wherein the fin cut structure comprises:
- an insulating liner comprising a material with a band gap greater than 5 eV;
- and
- a fill material on the insulating liner.
Dependencies are inferred from the claim text.