H10P 14/6923
The material being boron or phosphorus doped silicon oxides
Official title: {the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG}
H10P14/6923 (The material being boron or phosphorus doped silicon oxides) appears on 849 US grants and 501 published applications in this corpus.
Search patents in H10P- Granted patents
- 849
- Published applications
- 501
- Assignees
- 227
- Inventors
- 1,490
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 3 | 0 |
| 1978 | 5 | 0 |
| 1979 | 0 | 0 |
| 1980 | 4 | 0 |
| 1981 | 2 | 0 |
| 1982 | 5 | 0 |
| 1983 | 5 | 0 |
| 1984 | 3 | 0 |
| 1985 | 8 | 0 |
| 1986 | 3 | 0 |
| 1987 | 3 | 0 |
| 1988 | 9 | 0 |
| 1989 | 5 | 0 |
| 1990 | 8 | 0 |
| 1991 | 8 | 0 |
| 1992 | 10 | 0 |
| 1993 | 11 | 0 |
| 1994 | 18 | 0 |
| 1995 | 14 | 0 |
| 1996 | 13 | 0 |
| 1997 | 17 | 0 |
| 1998 | 29 | 0 |
| 1999 | 36 | 0 |
| 2000 | 53 | 0 |
| 2001 | 69 | 15 |
| 2002 | 51 | 38 |
| 2003 | 46 | 36 |
| 2004 | 42 | 40 |
| 2005 | 33 | 47 |
| 2006 | 33 | 41 |
| 2007 | 36 | 23 |
| 2008 | 24 | 10 |
| 2009 | 11 | 7 |
| 2010 | 16 | 6 |
| 2011 | 6 | 6 |
| 2012 | 8 | 6 |
| 2013 | 6 | 10 |
| 2014 | 8 | 11 |
| 2015 | 12 | 22 |
| 2016 | 18 | 18 |
| 2017 | 16 | 20 |
| 2018 | 24 | 17 |
| 2019 | 14 | 15 |
| 2020 | 17 | 29 |
| 2021 | 20 | 26 |
| 2022 | 20 | 20 |
| 2023 | 20 | 14 |
| 2024 | 9 | 12 |
| 2025 | 13 | 8 |
| 2026 | 3 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of forming expandable doped oxide films for advanced semiconductor applications18 Aug 2026US 12,713,887 B2Lam Research Corporation
- Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium10 Mar 2026US 12,575,347 B2Kokusai Electric Corporation
- Reduction of gate-drain capacitance27 Jan 2026US 12,538,570 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Microelectronic devices comprising a boron-containing material, and related electronic systems and methods28 Oct 2025US 12,456,685 B2Micron Technology, Inc.
- Method of manufacturing semiconductor device and semiconductor manufacturing apparatus21 Oct 2025US 12,451,355 B2Mitsubishi Electric Corporation
- Reduction of gate-drain capacitance30 Jul 2026US 2026/0223449 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for manufacturing same26 Mar 2026US 2026/0090296 A1Kabushiki Kaisha Toshiba
- Trench-based super junction structures via sidewall doping5 Mar 2026US 2026/0068236 A1APPLIED Materials.Inc.
- Microelectronic devices comprising a boron-containing material12 Feb 2026US 2026/0047426 A1Micron Technology, Inc.
- Interconnection structure and methods of forming the same13 Nov 2025US 2025/0349720 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process777US 5,000,113 AAPPLIED Materials.Inc. · 1991
- Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications600US 7,084,079 B2International Business Machines Corporation · 2006
- Conformal doping via plasma activated atomic layer deposition and conformal film deposition594US 8,956,983 B2Novellus Systems, Inc. · 2015
- Conformal nanolaminate dielectric deposition and etch bag gap fill process555US 7,482,247 B1Novellus Systems, Inc. · 2009
- Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications540US 6,531,412 B2Infineon Technologies AG · 2003