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US 2026/0047426 A1Published application
Microelectronic devices comprising a boron-containing material
AssigneeMicron Technology, Inc.
InventorsXiao Li, Jordan D. Greenlee
Life of this patent
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Abstract
A microelectronic device comprises a stack structure, a contact structure, a liner material, and a boron-containing material. The stack structure comprises alternating conductive structures and dielectric structures. The contact structure extends through the stack structure. The liner material is between the stack structure and the contact structure. The boron-containing material is between the liner material and the stack structure. Related electronic systems and methods are also described.
Claims20
A microelectronic device, comprising:
- a stack structure comprising tiers of alternating conductive structures and dielectric structures;
- one or more contact structures extending through the stack structure;
- a boron oxide material on side surfaces of the conductive structures of the tiers;
- and
- a dielectric material between the boron oxide material and the one or more contact structures.
2 more elements
A microelectronic device, comprising:
- a stack structure comprising alternating word lines and dielectric structures;
- a string of memory cells extending through the stack structure, the memory cells defined at intersections between the word lines and cell materials of the memory cells;
- one or more contact structures extending through the stack structure;
- a boron-containing material on sidewalls of the word lines;
- and
- a liner surrounding the one or more contact structures, and the boron-containing material surrounding the liner.
3 more elements
A microelectronic device, comprising:
- an array region adjacent to a contact region, the array region comprising vertical strings of memory cells extending within a stack structure;
- the contact region comprising one or more contact structures extending within the stack structure, a boron-containing material laterally adjacent to the one or more contact structures, and a dielectric material between the boron-containing material and the one or more contact structures;
- and
- a source vertically adjacent to the one or more contact structures and the vertical strings of memory cells.
1 more element
Dependencies are inferred from the claim text.