Semiconductor device and method for manufacturing same
AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation
InventorYuuichi WAKABAYASHI
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a semiconductor device includes preparing a structure body including a semiconductor part, a trench being formed in the structure body. The trench extends along a first direction. The method includes forming a doped glass film at an upper surface of the structure body and at a surface of the trench, forming a resist pattern on the structure body and performing lithography, removing the doped glass film at a location other than a location at which the resist pattern remains, and performing annealing treatment of the structure body including the doped glass film that remains.
Claims17
A method for manufacturing a semiconductor device, the method comprising:
- preparing a structure body including a semiconductor part, a trench being formed in the structure body, the trench extending along a first direction;
- forming a doped glass film at an upper surface of the structure body and at a surface of the trench;
- forming a resist pattern on the structure body and performing lithography;
- removing the doped glass film at a location other than a location at which the resist pattern remains;
- and
- performing annealing treatment of the structure body including the doped glass film that remains.
A method for manufacturing a semiconductor device, the method comprising:
- preparing a structure body including a semiconductor part, a trench being formed in the structure body, the trench extending along a first direction;
- forming an oxide film at an upper surface of the structure body and at a surface of the trench;
- forming a doped glass film on the oxide film;
- forming a resist pattern on the structure body and performing lithography;
- removing the doped glass film at a location other than a location at which the resist pattern remains;
- and
- performing annealing treatment of the structure body including the doped glass film that remains.
A semiconductor device, comprising:
- a first electrode;
- a semiconductor part located on the first electrode, a plurality of trenches being formed in the semiconductor part along a first direction, the semiconductor part including
- a first semiconductor layer connected with the first electrode, the first semiconductor layer being of a first conductivity type,
- a second semiconductor layer located on the first semiconductor layer, the second semiconductor layer being of a second conductivity type,
- a third semiconductor layer located on the second semiconductor layer, the third semiconductor layer being of the first conductivity type,
- a first impurity layer that is of the second conductivity type and extends from a periphery of an upper end portion of the trench to a periphery of a lower end portion of the trench for a portion of the plurality of trenches, and
- a second impurity layer that is of the second conductivity type and is located at a periphery of a lower end portion of the trench for another portion of the plurality of trenches;
- gate electrodes located inside the trenches;
- an insulating part located on the semiconductor part and inside the trenches;
- and
- a second electrode located on the semiconductor part, the second electrode being connected with the third semiconductor layer.
Dependencies are inferred from the claim text.