Trench-based super junction structures via sidewall doping

A method of forming a super junction device, the method comprising:

• etching a trench in a first N-type material on a substrate, wherein the trench forms at least a first N-type region from the first N-type material;
• forming a P-doped layer on a sidewall of the trench comprising the first N-type region, wherein the P-doped layer comprises a P-type dopant;
• annealing the P-doped layer sufficiently to cause the P-type dopant to diffuse into the first N-type region, thereby forming a P-type region in the first N-type region;
• and
• filling the trench with a second N-type material to form a second N-type region such that the P-type region is between the first N-type region and the second N-type region.

A method of forming a super junction device, the method comprising:

• etching a trench in a first N-type material, wherein the trench forms at least a first N-type region in the first N-type material;
• performing a plasma doping (PLAD) operation on a sidewall of the trench comprising the first N-type region, wherein the PLAD operation dopes the sidewall with a P-type dopant;
• annealing the sidewall sufficiently to cause the P-type dopant to diffuse into the first N-type region, thereby forming a P-type region in the first N-type region;
• and
• filling the trench with a second N-type material to form a second N-type region such that the P-type region is between the first N-type region and the second N-type region.