Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications

A method for depositing a dielectric film comprising the steps of:

• providing a chemical vapor deposition (CVD) reaction chamber;
• providing a semiconductor wafer within said reaction chamber;
• providing a semiconductor wafer within said reaction chamber, said wafer having features on a surface of said water, wherein said features are spaced to form at least one gap between said features;
• preheating said reaction chamber to a predetermined temperature of about 500-600° C.;
• providing a carbon containing organometallic precursor selected from the group consisting of TMCTS and OMCTS;
• providing an ozone-containing gas flowing at about 5000 sccm, wherein said ozone containing gas comprises oxygen and ozone, wherein said ozone has a concentration of about 15 wt %;
• providing a dopant-containing gas including TEB flowing between about 100-500 sccm and TEPO flowing between about 10-100 sccm;
• and
• reacting said precursor, said ozone-containing gas and said dopant-containing gas at a pressure between about 200-700 Torr to deposit a low-k film on said surface,
• so that said low-k film substantially fills said at least one gap.