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US 12,456,685 B2Granted
Microelectronic devices comprising a boron-containing material, and related electronic systems and methods
AssigneeMicron Technology, Inc.
InventorsXiao Li, Jordan D. Greenlee
Life of this patent
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Abstract
A microelectronic device comprises a stack structure, a contact structure, a liner material, and a boron-containing material. The stack structure comprises alternating conductive structures and dielectric structures. The contact structure extends through the stack structure. The liner material is between the stack structure and the contact structure. The boron-containing material is between the liner material and the stack structure. Related electronic systems and methods are also described.
Claims20
A microelectronic device, comprising:
- a stack structure comprising vertically alternating conductive structures and dielectric structures;
- a contact structure vertically extending through the stack structure;
- a liner material between the stack structure and the contact structure;
- and
- a boron-containing material between the liner material and the stack structure.
2 more elements
A microelectronic device, comprising:
- a stack structure comprising a contact structure and tiers of alternating conductive structures and dielectric structures;
- a boron-containing material on vertical surfaces of the tiers;
- and
- a dielectric material between the boron-containing material and the contact structure.
1 more element
An electronic system, comprising:
- an input device;
- an output device;
- a processor device operably coupled to the input device and the output device;
- and
- a memory device operably coupled to the processor device, the memory device comprising a microelectronic device, comprising:
- a stack structure comprising vertically alternating conductive structures and dielectric structures, side surfaces of the conductive structures being vertically recessed relative to side surfaces of the dielectric structures;
- a contact structure extending through the stack structure;
- a liner material surrounding the contact structure;
- and
- a boron-containing material between the liner material and the stack structure, portions of the boron-containing material horizontally adjacent the conductive structures being offset from additional portions of the boron-containing material horizontally adjacent the dielectric structures.
7 more elements
Dependencies are inferred from the claim text.