Integrated circuit device

An integrated circuit device, comprising:

• a fin-type active region that extends along a first lateral direction on a substrate;
• at least one nanosheet that is spaced apart from a fin top surface of the fin-type active region in a vertical direction, wherein the at least one nanosheet faces the fin top surface of the fin-type active region;
• a gate line that surrounds the at least one nanosheet on the fin-type active region, wherein the gate line extends along a second lateral direction, wherein the second lateral direction intersects the first lateral direction;
• a source/drain region disposed on the fin-type active region adjacent to the gate line, wherein the source/drain region is in contact with the at least one nanosheet;
• an insulating spacer structure that covers a sidewall of the gate line and a portion of the source/drain region;
• and
• a device isolation film that covers both sidewalls of the fin-type active region,
• wherein the insulating spacer structure comprises:
• a first spacer portion that covers the sidewall of the gate line and extends along the second lateral direction;
• a second spacer portion integrally connected to the first spacer portion, wherein the second spacer portion protrudes in the first lateral direction and covers a partial region of a sidewall of the source/drain region;
• and
• a spacer corner portion that fills a corner space defined by the gate line and the source/drain region between the first spacer portion and the second spacer portion,
• wherein the insulating spacer structure has a single film structure that includes a silicon oxycarbide (SiOC) film doped with about 0 at % to about 5 at % of nitrogen atoms, and
• wherein the second spacer portion has a planar shape of which a width in the second lateral direction gradually decreases with increasing distance from the first spacer portion.

An integrated circuit device, comprising:

• a fin-type active region;
• a source/drain region disposed on the fin-type active region;
• a pair of nanosheet stacks that are spaced apart from each other in a first lateral direction with the source/drain region interposed therebetween, wherein each nanosheet stack includes at least one nanosheet that is spaced apart in a vertical direction from a fin top surface of the fin-type active region, and each nanosheet stack faces the fin top surface of the fin-type active region and contacts the source/drain region;
• a pair of gate lines that each surround the at least one nanosheet of a respective nanosheet stack on the fin-type active region, wherein the pair of gate lines extend along a second lateral direction, wherein the second lateral direction intersects the first lateral direction;
• and
• a plurality of insulating spacer structures that cover the pair of gate lines and the source/drain region,
• wherein the plurality of insulating spacer structures include a plurality of first spacer portions, a plurality of second spacer portions, and a plurality of spacer corner portions,
• wherein the plurality of first spacer portions respectively cover sidewalls of the pair of gate lines, the plurality of second spacer portions are integrally connected to the plurality of first spacer portions and cover a portion of the source/drain region, and the plurality of spacer corner portions are interposed between the plurality of first spacer portions and the plurality of second spacer portions and fill corner spaces defined by the pair of gate lines and the source/drain region,
• wherein a thickness of each of the plurality of spacer corner portions in the first lateral direction and a thickness of each of the plurality of spacer corner portions in the second lateral direction are each greater than a thickness of each of the plurality of first spacer portions in the first lateral direction, and
• wherein each insulating spacer structure of the plurality of insulating spacer structures has a single film structure that includes a silicon oxycarbide (SiOC) film doped with about 0 at % to about 5 at % of nitrogen atoms.