H10P 14/6925
The material comprising hydrogen silsesquioxane
Official title: {the material comprising hydrogen silsesquioxane, e.g. HSQ}
H10P14/6925 (The material comprising hydrogen silsesquioxane) appears on 178 US grants and 92 published applications in this corpus.
Search patents in H10P- Granted patents
- 178
- Published applications
- 92
- Assignees
- 55
- Inventors
- 346
- Latest grant
- 3 Oct 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 5 | 0 |
| 1997 | 5 | 0 |
| 1998 | 4 | 0 |
| 1999 | 16 | 0 |
| 2000 | 22 | 0 |
| 2001 | 23 | 7 |
| 2002 | 16 | 15 |
| 2003 | 13 | 12 |
| 2004 | 11 | 8 |
| 2005 | 4 | 9 |
| 2006 | 5 | 7 |
| 2007 | 3 | 3 |
| 2008 | 2 | 3 |
| 2009 | 6 | 3 |
| 2010 | 5 | 1 |
| 2011 | 1 | 1 |
| 2012 | 1 | 1 |
| 2013 | 4 | 3 |
| 2014 | 0 | 1 |
| 2015 | 5 | 2 |
| 2016 | 2 | 3 |
| 2017 | 3 | 5 |
| 2018 | 7 | 4 |
| 2019 | 1 | 2 |
| 2020 | 0 | 1 |
| 2021 | 2 | 1 |
| 2022 | 1 | 0 |
| 2023 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Planarization of spin-on films3 Oct 2023US 11,776,808 B2Tokyo Electron Limited
- Reproducible and manufacturable nanogaps for embedded transverse electrode pairs in nanochannels11 Jan 2022US 11,221,310 B2International Business Machines Corporation
- Silicone resin, related methods, and film formed therewith13 Jul 2021US 11,059,994 B2Dow Silicones Corporation
- Self-aligned internal spacer with EUV26 Jan 2021US 10,903,335 B2Imec Vzw
- Reproducible and manufacturable nanogaps for embedded transverse electrode pairs in nanochannels1 Jan 2019US 10,168,299 B2International Business Machines Corporation
- Planarization of Spin-On Films23 Sep 2021US 2021/0296121 A1Tokyo Electron Limited
- Silicone resin, related methods, and film formed therewith6 Aug 2020US 2020/0248031 A1Dow Silicones Corporation
- Self-Aligned Internal Spacer With EUV14 Nov 2019US 2019/0348523 A1Imec Vzw
- Reproducible and manufacturable nanogaps for embedded transverse electrode pairs in nanochannels7 Mar 2019US 2019/0072518 A1International Business Machines Corporation
- Method for fabricating auto-aligned interconnection elements for a 3d integrated circuit7 Jun 2018US 2018/0158736 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
Most cited
By later US patents
- High modulus, low dielectric constant coatings575US 6,576,300 B1Axcelis Technologies, Inc. · 2003
- Plasma curing process for porous silica thin film556US 6,558,755 B2Axcelis Technologies, Inc. · 2003
- Semiconductor device and method of fabricating the same486US 6,245,665 B1NEC Corporation · 2001
- Low-K sub spacer pocket formation for gate capacitance reduction231US 6,351,013 B1Advanced Micro Devices, Inc. · 2002
- Lateral etch inhibited multiple for forming a via through a microelectronics layer susceptible to etching within a fluorine containing plasma followed by an oxygen containing plasma108US 5,888,309 ATaiwan Semiconductor Manufacturing Company.Ltd · 1999