Reproducible and manufacturable nanogaps for embedded transverse electrode pairs in nanochannels
AssigneeInternational Business Machines Corporation
InventorsAdam M. Pyzyna, Joshua T. Smith, Benjamin H. Wunsch
Life of this patent
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Abstract
A method for forming a nanogap includes forming a knockoff feature on a dielectric layer and forming a trench in the dielectric layer on opposite sides of the knockoff feature. A noble metal is deposited in the trenches and over the knockoff feature. A top surface is polished to level the noble metal in the trenches with a top of the dielectric layer to form electrodes in the trenches and to remove the noble metal from the knockoff feature. A nanochannel is etched into the dielectric layer such that the knockoff feature is positioned within the nanochannel. The knockoff feature is removed to form a nanogap between the electrodes.
Claims18
A nanochannel device, comprising:
- a substrate;
- a dielectric layer on the substrate;
- a nanochannel in the dielectric layer, wherein the nanochannel extends into the dielectric layer in a first direction;
- a first nanoelectrode extending into the nanochannel;
- and
- a second nanoelectrode extending into the nanochannel opposite the first nanoelectrode, wherein the first nanoeiectrode and the second nanoelectrode extend into the nanochannel in a second direction different from the first direction and are embedded in the dielectric layer on opposite sides of a nanogap disposed between the first nanoeiectrode and second nanoelectrode, wherein the nanochannel has a width adjacent to the first nanoelectrode and second nanoelectrode that is greater than a width of the nanogap, and wherein there is a uniform distance between an end-face of the first nanoelectrode and an end-face of the second nanoelectrode.
A nanochannel device, comprising:
- a dielectric layer;
- a nanochannel in the dielectric layer, wherein the nanochannel extends into the dielectric layer in a first direction;
- a first nanoelectrode extending past the wall of the nanochannel into the nanochannel, wherein the first nanoelectrode has a planar end-face;
- and
- a second nanoelectrode extending past the wall of the nanochannel into the nanochannel opposite the first nanoelectrode, wherein the first and second nanoelectrodes extend into the nanochannel in a second direction different from the first direction and, wherein the second nanoelectrode has a planar end-face facing the planar end-face of the first nanoelectrode on either side of a nanogap, and wherein the nanochannel has a width adjacent to the first and second nanoelectrodes that is greater than the width of the nanogap.
Dependencies are inferred from the claim text.