Reproducible and manufacturable nanogaps for embedded transverse electrode pairs in nanochannels
AssigneeInternational Business Machines Corporation
InventorsAdam M. Pyzyna, Joshua T. Smith, Benjamin H. Wunsch
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Abstract
A method for forming a nanogap includes forming a knockoff feature on a dielectric layer and forming a trench in the dielectric layer on opposite sides of the knockoff feature. A noble metal is deposited in the trenches and over the knockoff feature. A top surface is polished to level the noble metal in the trenches with a top of the dielectric layer to form electrodes in the trenches and to remove the noble metal from the knockoff feature. A nanochannel is etched into the dielectric layer such that the knockoff feature is positioned within the nanochannel. The knockoff feature is removed to form a nanogap between the electrodes.
Claims20
A nanochannel device, comprising:
- a substrate;
- a dielectric layer formed on the substrate;
- a nanochannel etched into the dielectric layer;
- a first noble metal electrode including a first nanoelectrode extending into the nanochannel;
- and
- a second noble metal electrode including a second nanoelectrode extending into the nanochannel;
- wherein the first noble metal electrode and the second noble metal electrode are monolithically and independently formed on either side of a nanogap disposed between the first nanoelectrode and second nanoelectrode.
A nanochannel device, comprising:
- a dielectric layer;
- a nanochannel etched into the dielectric layer;
- a first noble metal electrode extending into the nanochannel;
- and
- a second noble metal electrode extending into the nanochannel;
- wherein the first noble metal electrode and the second noble metal electrode are monolithically and independently formed on either side of a nanogap.
Dependencies are inferred from the claim text.