Reproducible and manufacturable nanogaps for embedded transverse electrode pairs in nanochannels
AssigneeInternational Business Machines Corporation
InventorsAdam M. Pyzyna, Joshua T. Smith, Benjamin H. Wunsch
Life of this patent
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Abstract
A method for forming a nanogap includes forming a knockoff feature on a dielectric layer and forming a trench in the dielectric layer on opposite sides of the knockoff feature. A noble metal is deposited in the trenches and over the knockoff feature. A top surface is polished to level the noble metal in the trenches with a top of the dielectric layer to form electrodes in the trenches and to remove the noble metal from the knockoff feature. A nanochannel is etched into the dielectric layer such that the knockoff feature is positioned within the nanochannel. The knockoff feature is removed to form a nanogap between the electrodes.
Claims17
A method for forming a nanogap, comprising:
- forming a knockoff feature on a dielectric layer;
- forming a trench in the dielectric layer on opposite sides of the knockoff feature;
- depositing a noble metal in the trenches and over the knockoff feature;
- polishing a top surface to remove the noble metal in field regions and the knockoff feature, leaving the noble metal in the trenches level with a top of the dielectric layer to form electrodes embedded in the trenches;
- etching a nanochannel in the dielectric layer such that the knockoff feature is positioned within the nanochannel;
- and
- removing the knockoff feature to form a nanogap between the electrodes and the nanogap lies within the nanochannel.
A method for forming a nanogap, comprising:
- forming a hydrogen silsesquioxane (HSQ) knockoff feature on a dielectric layer;
- forming a trench in the dielectric layer on opposite sides of the knockoff feature, the trenches including electrode and nanoelectrode shapes;
- depositing a noble metal in the trenches and over the knockoff feature;
- polishing a top surface to remove the noble metal in field regions and the knockoff feature, leaving the noble metal in the trenches level with a top of the dielectric layer to form embedded electrodes and nanoelectrodes in the trenches;
- etching a nanochannel in the dielectric layer such that the knockoff feature is positioned within the nanochannel;
- and
- removing the knockoff feature to form a nanogap between the nanoelectrodes and the nanogap lies within the nanochannel.
Dependencies are inferred from the claim text.