Lateral etch inhibited multiple for forming a via through a microelectronics layer susceptible to etching within a fluorine containing plasma followed by an oxygen containing plasma

A method for forming within a microelectronics fabrication a via through a microelectronics layer formed of a material susceptible to sequential etching employing a fluorine containing plasma etch method followed by an oxygen containing plasma etch method comprising:

• providing a substrate employed within a microelectronics fabrication;
• forming over the substrate a microelectronics layer formed of a material susceptible to sequential etching employing a fluorine containing plasma etch method followed by an oxygen containing plasma etch method;
• forming upon the microelectronics layer a patterned photoresist layer;
• etching through use of the fluorine containing plasma etch method while employing the patterned photoresist layer as a photoresist etch mask layer the microelectronics layer to form a patterned microelectronics layer having a via formed through the patterned microelectronics layer, the fluorine containing plasma etch method employing a fluorine containing etchant gas composition which simultaneously forms a fluorocarbon polymer residue layer upon a sidewall of the via;
• stripping through use of the oxygen containing plasma etch method the patterned photoresist layer from the patterned microelectronics layer while leaving remaining a no greater than partially etched fluorocarbon polymer residue layer upon the sidewall of the via, where the no greater than partially etched fluorocarbon polymer residue layer inhibits lateral etching of the patterned microelectronics layer;
• and
• stripping through use of a wet chemical stripping method the no greater than partially etched fluorocarbon polymer residue layer from the sidewall of the via.