H10P 14/6927
The material being a silicon oxynitride
Official title: {the material being a silicon oxynitride, e.g. SiON or SiON:H}
H10P14/6927 (The material being a silicon oxynitride) appears on 1,597 US grants and 1,576 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,597
- Published applications
- 1,576
- Assignees
- 314
- Inventors
- 3,125
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 3 | 0 |
| 1978 | 3 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 3 | 0 |
| 1986 | 5 | 0 |
| 1987 | 1 | 0 |
| 1988 | 6 | 0 |
| 1989 | 5 | 0 |
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 4 | 0 |
| 1993 | 7 | 0 |
| 1994 | 7 | 0 |
| 1995 | 7 | 0 |
| 1996 | 11 | 0 |
| 1997 | 10 | 0 |
| 1998 | 9 | 0 |
| 1999 | 31 | 0 |
| 2000 | 39 | 0 |
| 2001 | 93 | 32 |
| 2002 | 69 | 65 |
| 2003 | 62 | 69 |
| 2004 | 58 | 65 |
| 2005 | 42 | 70 |
| 2006 | 52 | 78 |
| 2007 | 46 | 75 |
| 2008 | 34 | 51 |
| 2009 | 42 | 48 |
| 2010 | 45 | 42 |
| 2011 | 44 | 26 |
| 2012 | 29 | 19 |
| 2013 | 23 | 29 |
| 2014 | 31 | 37 |
| 2015 | 37 | 70 |
| 2016 | 88 | 85 |
| 2017 | 76 | 90 |
| 2018 | 84 | 77 |
| 2019 | 75 | 84 |
| 2020 | 74 | 106 |
| 2021 | 79 | 87 |
| 2022 | 73 | 73 |
| 2023 | 55 | 72 |
| 2024 | 50 | 56 |
| 2025 | 43 | 51 |
| 2026 | 33 | 19 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Ion implantation for increased adhesion with resist material22 Sep 2026US 12,745,578 B2APPLIED Materials.Inc.
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium15 Sep 2026US 12,740,351 B2Kokusai Electric Corporation
- Nanosheet transistor device with bottom isolation8 Sep 2026US 12,733,220 B2International Business Machines Corporation
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium25 Aug 2026US 12,721,065 B2Kokusai Electric Corporation
- Thin film transistor and method of manufactruting thin film transistor18 Aug 2026US 12,713,660 B2Toppan Inc.
- Method for manufacturing semiconductor device24 Sep 2026US 2026/0293543 A1Kioxia Corporation
- Selective deposition of metal oxides using silanes as an inhibitor24 Sep 2026US 2026/0293544 A1Lam Research Corporation
- Methods of depositing sicon with c, o and n compositional control27 Aug 2026US 2026/0255895 A1APPLIED Materials.Inc.
- Reducing tensile film cracking13 Aug 2026US 2026/0239936 A1Lam Research Corporation
- Carrier comprising a charge-trapping layer, composite substrate comprising such a carrier and associated production methods13 Aug 2026US 2026/0239940 A1
Most cited
By later US patents
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Zirconium and/or hafnium oxynitride gate dielectric829US 6,013,553 ATexas Instruments Incorporated · 2000
- Precursor source mixtures666US 6,984,591 B1International Business Machines Corporation · 2006
- Precursors for depositing silicon containing films and processes thereof627US 7,122,222 B2Air Products and Chemicals, Inc. · 2006
- Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same626US 6,297,539 B1Sharp Laboratories of America, Inc. · 2001