Precursors for depositing silicon containing films and processes thereof
AssigneeAir Products and Chemicals, Inc.
InventorsManchao Xiao, Arthur Kenneth Hochberg, Kirk Scott Cuthill
Life of this patent
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Abstract
Processes for precursors for silicon dielectric depositions of silicon nitride, silicon oxide and silicon oxynitride on a substrate using a hydrazinosilane of the formula: [R12N—NH]nSi(R2)4−n where each R1 is independently selected from alkyl groups of C1 to C6; each R2 is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1–4. Some of the hydrazinosilanes are novel precursors.
Claims19
A process for the chemical vapor deposition of material selected from the group consisting of silicon nitride, silicon oxide, and silicon oxynitride on a substrate using a hydrazinosilane of the formula:
- [R12N—NH]nSi(R2)4−n
- where each R1 is independently selected from alkyl groups of C1 to C6;
- each R2 is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl;
- and n=1–4.
A low temperature chemical vapor deposition of silicon nitride in a reaction zone, comprising the steps of:
- a) heating a substrate to a temperature in the range of approximately 100–800° C. in said zone;
- b) maintaining the substrate in a vacuum at a pressure in the range of approximately 10−5 Torr–760 Torr in said zone;
- c) introducing into said zone a hydrazinosilane of the formula:
- [R12N—NH]nSi(R2)4−n
- where each R1 is independently selected from alkyl groups of C1 to C6;
- each R2 is independently selected from the group consisting of hydrogen, alkyl, allyl, and phenyl;
- and n=1–4;
- and
- d) maintaining the conditions of a) through c) sufficient to cause a film of silicon nitride to deposit on the substrate.
Dependencies are inferred from the claim text.