METHODS OF DEPOSITING SiCON WITH C, O AND N COMPOSITIONAL CONTROL
AssigneeApplied Materials, Inc.
InventorsMark Saly, David Thompson, Thomas Knisley, Bhaskar Jyoti Bhuyan
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Abstract
Methods of forming SiCON films comprising sequential exposure to a silicon precursor and a mixture of alkanolamine and amine reactants and an optional plasma are described. Methods of forming a silicon-containing film comprising sequential exposure to a silicon precursor and an epoxide with an optional plasma exposure are also described.
Claims20
A method of depositing a silicon-containing film, the method comprising sequentially exposing a substrate surface to a silicon precursor and a reactant comprising a diamine, an alkanolamine, or a mixture of the diamine and the alkanolamine.
A method of depositing a silicon-containing film, the method comprising:
- exposing a substrate surface to a silicon precursor;
- purging unreacted silicon precursor from the substrate surface;
- exposing the substrate surface to a reactant comprising a diamine, an alkanolamine, or a mixture of the diamine and the alkanolamine to form the silicon-containing film;
- purging unreacted reactant from the substrate surface;
- and
- repeating exposing the substrate surface to the silicon precursor, purging unreacted silicon precursor, exposing the substrate surface to the reactant, and purging unreacted reactant to form a silicon-containing film having a predetermined thickness.
Dependencies are inferred from the claim text.