Carrier comprising a charge-trapping layer, composite substrate comprising such a carrier and associated production methods

A composite substrate, comprising:

• a support, comprising:
• a base substrate;
• and
• an interlayer on a base substrate, the interlayer including:
• a trapping layer in contact with the base substrate, the trapping layer comprising a silicon-rich oxide having an atomic concentration of silicon of between 40% and 99.9%;
• a dielectric layer in contact with the trapping layer and comprising a silicon oxide having a stoichiometric atomic concentration of silicon;
• and
• a transition zone arranged between the trapping layer and the dielectric layer having a thickness greater than 50 nm in which the atomic concentration of silicon varies continuously;
• and
• a single-crystal thin film arranged on the support.

A method for manufacturing a support for a composite substrate, the method comprising:

• a step of providing a base substrate in a chamber of a deposition equipment;
• and
• forming an interlayer in situ on the base without exposing the support to the ambient atmosphere by sequentially:
• forming a trapping layer, in contact with the base substrate, the trapping layer comprising a silicon-rich oxide having an atomic concentration of silicon of between 40% and 99.9%;
• a forming a transition layer directly on the trapping layer, the transition layer having a transition zone with a thickness greater than 50 nm in which the atomic concentration of silicon varies continuously;
• and
• forming a dielectric layer in contact with the transition layer and comprising a silicon oxide having a stoichiometric atomic concentration of silicon.