Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same

A MOSFET transistor comprising:

• a) a gate electrode;
• b) a channel region having a top surface underlying said gate electrode;
• and
• c) a gate dielectric film interposed between said gate electrode and said channel region top surface, having a high dielectric constant relative to silicon dioxide, including a metal selected from the group consisting of zirconium (Zr) and hafnium (Hf), and including oxygen, and further including a doping metal.

In the fabrication of an integrated circuit (IC) having a surface, a method of forming a doped metal oxide film on the IC surface comprising the steps of:

• a) establishing an atmosphere including oxygen;
• b) sputtering at least one target metal including a metal selected from the group consisting of Zr and Hf, and including a doping metal on the IC silicon surface;
• c) in response to Steps a) and b), forming the doped metal oxide film;
• and
• d) annealing at a temperature in the range of approximately 400 and 900 degrees C., whereby a thin film having a high dielectric constant and good barrier properties is formed.

In the fabrication of an integrated circuit (IC) having a surface, a method of forming a doped metal oxide film comprising the steps of:

• a) preparing at least one precursor including a metal selected from the group consisting of Zr and Hf, and a doping metal;
• b) vaporizing the at least one precursor;
• c) establishing an atmosphere including oxygen;
• d) decomposing the precursor on the IC surface to deposit, by chemical vapor deposition (CVD), an alloy film including a metal selected from the group consisting of Zr and Hf, a doping metal, and oxygen;
• and
• e) annealing at a temperature in the range of approximately 400 to 900 degrees C., whereby a thin film having a high dielectric constant and good barrier properties is formed.

In the fabrication of an integrated circuit (IC) having a surface, a method of forming a doped metal oxide film comprising the steps of:

• a) preparing a first precursor including a metal selected from the group consisting of Zr and Hf;
• b) vaporizing the first precursor and exposing the IC surface to the precursor, whereby a layer of the metal is chemically adsorbed to the surface to deposit, by ALCVD, the layer of metal;
• c) preparing an oxygen precursor;
• d) vaporizing the oxygen precursor and exposing the IC surface to the oxygen precursor, whereby a layer of oxygen is chemically adsorbed to the surface to deposit, by ALCVD, the layer of oxygen;
• e) preparing a doping metal precursor, which includes a doping metal;
• f) vaporizing the doping metal precursor and exposing the IC surface to the doping metal precursor, whereby a layer of the doping metal is chemically adsorbed to the surface to deposit, by ALCVD, the layer of doping metal;
• and
• g) annealing at a temperature in the range of approximately 300 to 900 degrees C. to condition the deposited layers, whereby a thin film having a high dielectric constant and good barrier properties is formed.

In the fabrication of an integrated circuit (IC) having a silicon surface, a method of forming a doped metal oxide film comprising the steps of:

• a) preparing at least one crucible including a metal selected from the group consisting of Zr and Hf, and a doping metal;
• b) establishing a vacuum atmosphere;
• c) heating the at least one crucible to a crucible temperature in the range of approximately 1000 and 2000 degrees C., to evaporate the metals prepared in Step a);
• d) in response to Steps a) through c), depositing an alloy film including a metal selected from the group consisting of Zr and Hf, and the doping metal;
• and
• e) annealing in an atmosphere including oxygen at a temperature in the range of approximately 400 to 900 degrees C. to form an alloy film including the metal selected from the group consisting of Zr and Hf, the doping metal, and oxygen, whereby a thin film having a high dielectric constant and good barrier properties is formed.