H10D 84/83
Of only insulated-gate fets [igfet]
Official title: of only insulated-gate FETs [IGFET]
H10D84/83 (Of only insulated-gate fets [igfet]) appears on 23,193 US grants and 27,733 published applications in this corpus.
Search patents in H10D- Granted patents
- 23,193
- Published applications
- 27,733
- Assignees
- 1,497
- Inventors
- 18,832
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 29 | 0 |
| 1977 | 30 | 0 |
| 1978 | 23 | 0 |
| 1979 | 25 | 0 |
| 1980 | 29 | 0 |
| 1981 | 23 | 0 |
| 1982 | 21 | 0 |
| 1983 | 18 | 0 |
| 1984 | 26 | 0 |
| 1985 | 36 | 0 |
| 1986 | 38 | 0 |
| 1987 | 54 | 0 |
| 1988 | 43 | 0 |
| 1989 | 62 | 0 |
| 1990 | 73 | 0 |
| 1991 | 80 | 0 |
| 1992 | 59 | 0 |
| 1993 | 65 | 0 |
| 1994 | 90 | 0 |
| 1995 | 87 | 0 |
| 1996 | 92 | 0 |
| 1997 | 83 | 0 |
| 1998 | 133 | 0 |
| 1999 | 158 | 0 |
| 2000 | 152 | 0 |
| 2001 | 128 | 52 |
| 2002 | 147 | 185 |
| 2003 | 134 | 149 |
| 2004 | 145 | 170 |
| 2005 | 140 | 177 |
| 2006 | 137 | 210 |
| 2007 | 131 | 249 |
| 2008 | 126 | 298 |
| 2009 | 161 | 277 |
| 2010 | 252 | 391 |
| 2011 | 300 | 364 |
| 2012 | 330 | 398 |
| 2013 | 465 | 678 |
| 2014 | 671 | 897 |
| 2015 | 1004 | 1444 |
| 2016 | 1468 | 1580 |
| 2017 | 1687 | 1701 |
| 2018 | 1681 | 1628 |
| 2019 | 1785 | 1771 |
| 2020 | 1784 | 2111 |
| 2021 | 1544 | 1833 |
| 2022 | 1473 | 2090 |
| 2023 | 1507 | 2338 |
| 2024 | 1667 | 2494 |
| 2025 | 1711 | 2601 |
| 2026 | 1086 | 1647 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10D 84/85Complementary igfets13,468
- H10D 84/834Comprising finfets5,983
- H10D 84/8311The igfets characterised by having different channel structures3,091
- H10D 84/83138The igfets characterised by having different shapes or dimensions of their gate1,401
- H10D 84/83135The igfets characterised by having different gate conductor materials or different gate1,373
- H10D 84/832Comprising igfets having stacked nanowire, nanosheet or nanoribbon channels1,296
- H10D 84/8312The igfets characterised by having different source or drain region structures1,180
- H10D 84/837Comprising vertical igfets990
All 14 subgroupsShow fewer
- H10D 84/8314The igfets characterised by having gate insulating layers with different properties936
- H10D 84/83125The igfets characterised by having shared source or drain regions663
- H10D 84/8316The igfets characterised by having gate sidewall spacers specially adapted for integration550
- H10D 84/84Combinations of enhancement-mode igfets and depletion-mode igfets525
- H10D 84/835Comprising ldmos366
- H10D 84/836Comprising edmos199
Recent patents
- Semiconductor device and method for driving semiconductor device6 Oct 2026US 12,755,697 B2Semiconductor Energy Laboratory Co.Ltd.
- Display device and electronic device6 Oct 2026US 12,755,707 B2Semiconductor Energy Laboratory Co.Ltd.
- Integrated circuit6 Oct 2026US 12,756,182 B2Via Labs, Inc.
- Half-bridge circuit using monolithic flip-chip GAN power devices6 Oct 2026US 12,756,203 B2Navitas Semiconductor Limited
- Integrated resistor-transistor-capacitor snubber6 Oct 2026US 12,756,386 B2Semiconductor Components Industries, LLC
- Memory device8 Oct 2026US 2026/0311751 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit and method of forming the same8 Oct 2026US 2026/0312573 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Three-dimensional memory device containing peripheral circuit with fin field effect transistors and method of making the same8 Oct 2026US 2026/0313892 A1SanDisk Technologies LLC
- Decoupling finfet capacitors8 Oct 2026US 2026/0313922 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure8 Oct 2026US 2026/0313931 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of cutting metal gate3,322US 9,520,482 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Semiconductor devices and methods of manufacture thereof1,575US 8,785,285 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- FinFET devices with unique fin shape and the fabrication thereof1,337US 9,548,303 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- System and methods for converting planar design to FinFET design1,326US 8,816,444 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Vertical gate all around (VGAA) devices and methods of manufacturing the same987US 9,536,738 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017