H10D 84/8314
The igfets characterised by having gate insulating layers with different properties
Official title: {the IGFETs characterised by having gate insulating layers with different properties}
H10D84/8314 (The igfets characterised by having gate insulating layers with different properties) appears on 936 US grants and 1,173 published applications in this corpus.
Search patents in H10D- Granted patents
- 936
- Published applications
- 1,173
- Assignees
- 181
- Inventors
- 1,867
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 3 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 3 | 0 |
| 1998 | 5 | 0 |
| 1999 | 9 | 0 |
| 2000 | 14 | 0 |
| 2001 | 7 | 3 |
| 2002 | 11 | 13 |
| 2003 | 9 | 9 |
| 2004 | 11 | 18 |
| 2005 | 8 | 15 |
| 2006 | 12 | 15 |
| 2007 | 8 | 18 |
| 2008 | 11 | 20 |
| 2009 | 11 | 22 |
| 2010 | 18 | 12 |
| 2011 | 22 | 16 |
| 2012 | 13 | 19 |
| 2013 | 19 | 22 |
| 2014 | 23 | 43 |
| 2015 | 43 | 37 |
| 2016 | 43 | 54 |
| 2017 | 47 | 65 |
| 2018 | 66 | 57 |
| 2019 | 60 | 74 |
| 2020 | 72 | 75 |
| 2021 | 59 | 72 |
| 2022 | 57 | 92 |
| 2023 | 65 | 113 |
| 2024 | 70 | 114 |
| 2025 | 86 | 108 |
| 2026 | 32 | 67 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Gate dielectric layers for stacked multi-gate device25 Aug 2026US 12,720,807 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with supporting structures and method for forming the same25 Aug 2026US 12,720,846 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method for forming the same18 Aug 2026US 12,713,638 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method for fabricating the same11 Aug 2026US 12,707,703 B2United Microelectronics Corp.
- LDMOS transistor device and method for forming the same4 Aug 2026US 12,701,732 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device24 Sep 2026US 2026/0293298 A1Samsung Electronics Co., Ltd.
- Semiconductor device27 Aug 2026US 2026/0255667 A1United Microelectronics Corp.
- Gallium nitride semiconductor device and preparation method therefor13 Aug 2026US 2026/0239649 A1Csmc Technologies Fab2 Co., Ltd.
- Semiconductor device gate structure30 Jul 2026US 2026/0223443 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Fabrication of gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with a dipole layer30 Jul 2026US 2026/0223450 A1Intel Corporation
Most cited
By later US patents
- Semiconductor integrated circuit device166US 7,016,214 B2Hitachi, Ltd. · 2006
- Method for forming stacked nanowire transistors153US 10,032,627 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2018
- CMOS integrated circuit having PMOS and NMOS devices with different gate dielectric layers131US 5,763,922 AIntel Corporation · 1998
- Process for producing an integrated multi-layer insulator memory cell114US 4,257,832 ASiemens Aktiengesellschaft · 1981
- Method of making very short channel length MNOS and MOS devices by double implantation of one conductivity type subsequent to other type implantation110US 4,342,149 ASiemens Aktiengesellschaft · 1982