Gallium nitride semiconductor device and preparation method therefor

Abstract

A GaN semiconductor device and a method for manufacturing the same are provided. The GaN semiconductor device includes: a substrate; a first GaN layer disposed on the substrate; a first dielectric layer disposed on the first GaN layer; and a first gate disposed on the first dielectric layer. In the GaN semiconductor device and the manufacturing method therefor, the first dielectric layer is disposed between the first gate and the first gallium nitride layer. On the one hand, 2DES with high concentration generated by the first dielectric layer and the first gallium nitride layer due to polarization effect can consume holes in a region where the first gate is located, increasing threshold voltage of the device; on the other hand, a thickness of the first gallium nitride layer under the first gate can be increased, reducing on-resistance of the device and increasing output current of the device.

Dependencies are inferred from the claim text.