H10D 84/80
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting
Official title: characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs (H10D84/40 takes precedence)
H10D84/80 (Integrated devices formed in or on semiconductor substrates that comprise only semiconducting) appears on 28,522 US grants and 33,717 published applications in this corpus.
Search patents in H10D- Granted patents
- 28,522
- Published applications
- 33,717
- Assignees
- 1,891
- Inventors
- 23,804
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 37 | 0 |
| 1977 | 50 | 0 |
| 1978 | 32 | 0 |
| 1979 | 31 | 0 |
| 1980 | 40 | 0 |
| 1981 | 32 | 0 |
| 1982 | 25 | 0 |
| 1983 | 24 | 0 |
| 1984 | 38 | 0 |
| 1985 | 38 | 0 |
| 1986 | 40 | 0 |
| 1987 | 61 | 0 |
| 1988 | 44 | 0 |
| 1989 | 74 | 0 |
| 1990 | 86 | 0 |
| 1991 | 97 | 0 |
| 1992 | 78 | 0 |
| 1993 | 74 | 0 |
| 1994 | 106 | 0 |
| 1995 | 104 | 0 |
| 1996 | 107 | 0 |
| 1997 | 112 | 0 |
| 1998 | 176 | 0 |
| 1999 | 199 | 0 |
| 2000 | 227 | 0 |
| 2001 | 209 | 88 |
| 2002 | 218 | 258 |
| 2003 | 214 | 239 |
| 2004 | 224 | 259 |
| 2005 | 212 | 298 |
| 2006 | 215 | 350 |
| 2007 | 215 | 393 |
| 2008 | 213 | 460 |
| 2009 | 268 | 432 |
| 2010 | 404 | 583 |
| 2011 | 459 | 587 |
| 2012 | 481 | 582 |
| 2013 | 684 | 936 |
| 2014 | 924 | 1223 |
| 2015 | 1309 | 1770 |
| 2016 | 1813 | 1940 |
| 2017 | 2028 | 2021 |
| 2018 | 1993 | 1943 |
| 2019 | 2102 | 2110 |
| 2020 | 2088 | 2417 |
| 2021 | 1788 | 2092 |
| 2022 | 1702 | 2434 |
| 2023 | 1727 | 2646 |
| 2024 | 1907 | 2823 |
| 2025 | 1963 | 2935 |
| 2026 | 1230 | 1898 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device and method for driving semiconductor device6 Oct 2026US 12,755,697 B2Semiconductor Energy Laboratory Co.Ltd.
- Display device and electronic device6 Oct 2026US 12,755,707 B2Semiconductor Energy Laboratory Co.Ltd.
- Integrated circuit6 Oct 2026US 12,756,182 B2Via Labs, Inc.
- Half-bridge circuit using monolithic flip-chip GAN power devices6 Oct 2026US 12,756,203 B2Navitas Semiconductor Limited
- Integrated resistor-transistor-capacitor snubber6 Oct 2026US 12,756,386 B2Semiconductor Components Industries, LLC
- Semiconductor switch with degradation detection8 Oct 2026US 2026/0309774 A1Infineon Technologies AG
- Memory device8 Oct 2026US 2026/0311751 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit and method of forming the same8 Oct 2026US 2026/0312573 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Three-dimensional memory device containing peripheral circuit with fin field effect transistors and method of making the same8 Oct 2026US 2026/0313892 A1SanDisk Technologies LLC
- Decoupling finfet capacitors8 Oct 2026US 2026/0313922 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of cutting metal gate3,322US 9,520,482 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Semiconductor devices and methods of manufacture thereof1,575US 8,785,285 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- FinFET devices with unique fin shape and the fabrication thereof1,337US 9,548,303 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Structure and method for FinFET integrated with capacitor1,331US 8,860,148 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- System and methods for converting planar design to FinFET design1,326US 8,816,444 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014