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US 12,756,203 B2Granted
Half-bridge circuit using monolithic flip-chip GAN power devices
AssigneeNavitas Semiconductor Limited
InventorsDaniel M. Kinzer, Santosh Sharma, Ju Jason Zhang
Life of this patent
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Abstract
GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.
Claims20
A power converter system, comprising:
- a first electronic package including:
- a first gallium-nitride based transistor;
- an electrically insulative encapsulant at least partially enclosing the first gallium-nitride based transistor;
- a first drain terminal at an exterior of the first electronic package and electrically connected to a drain of the first gallium-nitride based transistor;
- a first source terminal at an exterior of the first electronic package and electrically connected to a source of the first gallium-nitride based transistor;
- and
- a first driver circuit connected to a gate of the first gallium-nitride based transistor:
- a second electronic package including:
- a second gallium-nitride based transistor;
- an electrically insulative encapsulant at least partially enclosing the second gallium-nitride based transistor;
- a second drain terminal at an exterior of the second electronic package and electrically connected to a drain of the second gallium-nitride based transistor;
- a second source terminal at an exterior of the second electronic package and electrically connected to a source of the second gallium-nitride based transistor;
- wherein, the first and second electronic packages are configured to attach to a circuit board that electrically connects the first drain terminal to the first source terminal.
10 more elements
A power converter system comprising:
- a first electronic device including:
- a first gallium-nitride based transistor disposed on a first semiconductor die, the first semiconductor die formed from at least one layer of gallium-nitride disposed on a layer of silicon;
- an exterior surface at least partially formed from an electrically insulative encapsulant;
- a first drain terminal at an exterior of the first electronic device and electrically connected to a drain of the first gallium-nitride based transistor;
- a first source terminal at an exterior of the first electronic device and electrically connected to a source of the first gallium-nitride based transistor;
- and
- a first driver circuit connected to a gate of the first gallium-nitride based transistor;
- a second electronic device including:
- a second gallium-nitride based transistor disposed on a second semiconductor die, the second semiconductor die formed from at least one layer of gallium-nitride disposed on a layer of silicon;
- an exterior surface at least partially formed from an electrically insulative encapsulant;
- a second drain terminal at an exterior of the second electronic device and electrically connected to a drain of the second gallium-nitride based transistor;
- a second source terminal at an exterior of the second electronic device and electrically connected to a source of the second gallium-nitride based transistor;
- wherein, the first drain terminal of the first electronic device is configured to be electrically connected to the second source terminal of the second electronic device via an electrical conductor.
10 more elements
Dependencies are inferred from the claim text.